Structural improvement of amorphous silicon using metal-induced crystallization

被引：0

作者：

Khakifirooz, A ^{[1
]}

Haji, S ^{[1
]}

Mohajerzadeh, SS ^{[1
]}

Soleimani, EA ^{[1
]}

机构：

[1] Univ Tehran, Dept Elect & Comp Engn, Thin Film Lab, Tehran, Iran

来源：

ICM 2000: PROCEEDINGS OF THE 12TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS | 2000年

关键词：

amorphous silicon; polysilicon; metal-induced crystallization; UV exposure; electric field;

D O I：

10.1109/ICM.2000.916452

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, two new techniques are reported to lower the crystallization temperature of amorphous silicon (a-Si) on ordinary glass down to 400 degreesC. UV light exposure was used during nickel-induced crystallization, resulting in an improved crystallization rate. Also, the effect of applying an electric field during metal-induced lateral crystallization is studied. A lateral growth of 300 mum is observed by annealing the sample at 400 degreesC for 30 min, with applying an electric field of 100 V/cm. XRD and SEM are employed to study the morphological structure of the samples.

引用

页码：237 / 240

页数：4

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