Role of charge carriers for ferromagnetism in cobalt-doped rutile TiO2

被引：41

作者：

Fukumura, T. ^{[1
]}

Toyosaki, H. ^{[1
]}

Ueno, K. ^{[1
]}

Nakano, M. ^{[1
]}

Kawasaki, M. ^{[1
,2
,3
]}

机构：

[1] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

[2] Japan Sci & Technol Agcy, CREST, Kawaguchi, Saitama 3320012, Japan

[3] Tohoku Univ, WPI Adv Inst Mat Res, Sendai, Miyagi 9808577, Japan

来源：

NEW JOURNAL OF PHYSICS | 2008年 / 10卷

关键词：

D O I：

10.1088/1367-2630/10/5/055018

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Electric and magnetic properties of a high-temperature ferromagnetic oxide semiconductor, cobalt-doped rutile TiO2, are summarized. Cobalt-doped rutile TiO2 epitaxial thin films with different electron densities and cobalt contents were grown on r-sapphire substrates with laser molecular beam epitaxy. Results of magnetization, magnetic circular dichroism and anomalous Hall-effect measurements were examined for samples with systematically varied electron densities and cobalt contents. The samples with high electron densities and cobalt contents show high-temperature ferromagnetism, suggesting that charge carriers induce the ferromagnetism.

引用

页数：13

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