Sb-based HEMTs with InAlSb/InAs heterojunction

被引：18

作者：

Papanicolaou, NA ^{[1
]}

Bennett, BR ^{[1
]}

Boos, JB ^{[1
]}

Park, D ^{[1
]}

Bass, R ^{[1
]}

机构：

[1] USN, Res Lab, Washington, DC 20375 USA

来源：

ELECTRONICS LETTERS | 2005年 / 41卷 / 19期

关键词：

D O I：

10.1049/el:20052105

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Antimonide-based HEMTs with a 0.35 mu m gate length have been fabricated with an InAlSb/InAs heterojunction. The new Te-doped MBE material, which does not contain highly-reactive AlSb, exhibits a Hall mobility of 23,500 cm(2)/V-s and a sheet density of 1.7 x 10(12) cm(-2). The devices have a DC transconductance of 1000 mS/ mm and an f(T)L(g) product of 32 GHz-mu m at V(DS) = 0.35 V.

引用

页码：1088 / 1089

页数：2

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