Nano-porous GaN cladding and scattering loss in edge emitting laser diodes

被引：20

作者：

Anderson, Ryan ^{[1
]}

Cohen, Dan ^{[1
]}

Zhang, Haojun ^{[1
]}

Trageser, Emily ^{[1
]}

Palmquist, Nathan ^{[1
]}

Nakamura, Shuji ^{[1
,2
]}

DenBaars, Steve ^{[1
,2
]}

机构：

[1] Univ Calif Santa Barbara, Mat Dept, Santa Barbara, CA 93107 USA

[2] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93107 USA

来源：

OPTICS EXPRESS | 2022年 / 30卷 / 02期

基金：

美国国家科学基金会;

关键词：

Continuous-wave operations - Edge emitting laser diode - Electrically injected - Emission wavelength - Excess loss - InGaN laser diodes - Nano-porous - Pulsed injection - Scattering loss - Slope efficiencies;

D O I：

10.1364/OE.445512

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We report continuous wave operation of electrically injected InGaN laser diodes using nano-porous GaN n-side cladding with 33% porosity. At 454 nm emission wavelength, the pulsed injection slope efficiency is 0.24 W/A with a high loss of 82 cm(-1). The considerable 60 cm(-1 )of excess loss of the nano-porous clad lasers is attributed to scattering at pores in unintentionally 3% porosified layers, supported by numerical modeling. Simulations comparing porous GaN cladding to AlInN cladding for lasers operating at 589 nm indicate that the porous cladding provides similar internal loss and lower thermal impedance. (C) 2022 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement

引用

页码：2759 / 2767

页数：9

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