Inversion in Metal-Oxide-Semiconductor Capacitors on Boron-Doped Diamond

被引：23

作者：

Kovi, Kiran Kumar ^{[1
]}

Vallin, Orjan ^{[2
]}

Majdi, Saman ^{[1
]}

Isberg, Jan ^{[1
]}

机构：

[1] Uppsala Univ, Angstrom Lab, Dept Engn Sci, Div Elect, S-75121 Uppsala, Sweden

[2] Uppsala Univ, Angstrom Lab, Dept Engn Sci, Div Solid State Elect, S-75121 Uppsala, Sweden

来源：

IEEE ELECTRON DEVICE LETTERS | 2015年 / 36卷 / 06期

基金：

瑞典研究理事会;

关键词：

SC-CVD diamond; MOS structures; inversion; FREQUENCY; VOLTAGE;

D O I：

10.1109/LED.2015.2423971

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

For the advancement of diamond-based electronic devices, the fabrication of metal-oxide-semiconductor field-effect transistors (MOSFETs) is crucial, as this device finds applications in numerous fields of power electronics and high-frequency systems. The MOS capacitor forms the basic building block of the MOSFET. In this letter, we describe planar MOS capacitor structures fabricated with atomic layer deposited aluminum oxide as the dielectric on oxygen-terminated boron-doped diamond substrates with different doping levels. Using capacitance-voltage measurements, we have, for the first time, observed inversion behavior in MOS structures on boron-doped diamond, with a doping concentration of 4.1 x 10(19)/cm(3).

引用

页码：603 / 605

页数：3

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