Inversion in Metal-Oxide-Semiconductor Capacitors on Boron-Doped Diamond

被引：23

作者：

Kovi, Kiran Kumar ^{[1
]}

Vallin, Orjan ^{[2
]}

Majdi, Saman ^{[1
]}

Isberg, Jan ^{[1
]}

机构：

[1] Uppsala Univ, Angstrom Lab, Dept Engn Sci, Div Elect, S-75121 Uppsala, Sweden

[2] Uppsala Univ, Angstrom Lab, Dept Engn Sci, Div Solid State Elect, S-75121 Uppsala, Sweden

来源：

IEEE ELECTRON DEVICE LETTERS | 2015年 / 36卷 / 06期

基金：

瑞典研究理事会;

关键词：

SC-CVD diamond; MOS structures; inversion; FREQUENCY; VOLTAGE;

D O I：

10.1109/LED.2015.2423971

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

For the advancement of diamond-based electronic devices, the fabrication of metal-oxide-semiconductor field-effect transistors (MOSFETs) is crucial, as this device finds applications in numerous fields of power electronics and high-frequency systems. The MOS capacitor forms the basic building block of the MOSFET. In this letter, we describe planar MOS capacitor structures fabricated with atomic layer deposited aluminum oxide as the dielectric on oxygen-terminated boron-doped diamond substrates with different doping levels. Using capacitance-voltage measurements, we have, for the first time, observed inversion behavior in MOS structures on boron-doped diamond, with a doping concentration of 4.1 x 10(19)/cm(3).

引用

页码：603 / 605

页数：3

共 17 条

[1] Evaluation of the High Temperatures Influence on High Frequency C-V Curves of MOS Capacitor [J].

Borges Ziliotto, Ana Paula ;

Bellodi, Marcello .

STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS 53 (SOTAPOCS 53), 2011, 41 (06) :163-173

[2] Role of interfacial layer thickness on high-k dielectric-based MOS devices [J].

Chakraborty, C. .

JOURNAL OF ADVANCED DIELECTRICS, 2014, 4 (03)

[3] Integration of high-dielectric constant Ta2O5 oxides on diamond for power devices [J].

Cheng, Shaoheng ;

Sang, Liwen ;

Liao, Meiyong ;

Liu, Jiangwei ;

Imura, Masataka ;

Li, Hongdong ;

Koide, Yasuo .

APPLIED PHYSICS LETTERS, 2012, 101 (23)

[4] Metal oxide semiconductor structure using oxygen-terminated diamond [J].

Chicot, G. ;

Marechal, A. ;

Motte, R. ;

Muret, P. ;

Gheeraert, E. ;

Pernot, J. .

APPLIED PHYSICS LETTERS, 2013, 102 (24)

[5]

HARTSELL ML, 1994, P SOC PHOTO-OPT INS, V2151, P91, DOI 10.1117/12.171754

[6] Capacitance-voltage measurements on metal-SiO2-boron-doped homoepitaxial diamond [J].

Inushima, T ;

Nakama, T ;

Shiraishi, T ;

Mitsuhashi, M ;

Watanabe, T .

[7] High carrier mobility in single-crystal plasma-deposited diamond [J].

Isberg, J ;

Hammersberg, J ;

Johansson, E ;

Wikström, T ;

Twitchen, DJ ;

Whitehead, AJ ;

Coe, SE ;

Scarsbrook, GA .

SCIENCE, 2002, 297 (5587) :1670-1672

[8] Thermal Stabilization of Hole Channel on H-Terminated Diamond Surface by Using Atomic-Layer-Deposited Al2O3 Overlayer and its Electric Properties [J].

Kasu, Makoto ;

Sato, Hisashi ;

Hirama, Kazuyuki .

APPLIED PHYSICS EXPRESS, 2012, 5 (02)

[9] A charge transport study in diamond, surface passivated by high-k dielectric oxides [J].

Kovi, Kiran Kumar ;

Majdi, Saman ;

Gabrysch, Markus ;

Isberg, Jan .

APPLIED PHYSICS LETTERS, 2014, 105 (20)

[10] Silicon Oxide Passivation of Single-Crystalline CVD Diamond Evaluated by the Time-of-Flight Technique [J].

Kovi, Kiran Kumar ;

Majdi, Saman ;

Gabrysch, Markus ;

Isberg, Jan .

ECS SOLID STATE LETTERS, 2014, 3 (05) :P65-P68

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