Emerging doping strategies in two-dimensional hybrid perovskite semiconductors for cutting edge optoelectronics applications

被引:22
作者
Parveen, Sumaiya [1 ]
Giri, P. K. [1 ,2 ]
机构
[1] Indian Inst Technol Guwahati, Dept Phys, Gauhati 781039, India
[2] Indian Inst Technol Guwahati, Ctr Nanotechnol, Gauhati 781039, India
来源
NANOSCALE ADVANCES | 2022年 / 4卷 / 04期
基金
日本学术振兴会;
关键词
TIN-HALIDE PEROVSKITES; EXCITON BINDING-ENERGY; LIGHT-EMITTING-DIODES; 2D PEROVSKITE; SOLAR-CELLS; OPTICAL-PROPERTIES; QUANTUM YIELD; EMISSION; NANOCRYSTALS; STABILITY;
D O I
10.1039/d1na00709b
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The past decade has witnessed tremendous progress in metal halide perovskites, particularly in lead (Pb) halide perovskites, because of their extraordinary performance in cutting-edge optoelectronic devices. However, the toxicity of Pb and the environmental stability of the perovskites are two major issues that this field is currently facing. In recent years, 2D layered perovskites have emerged as a promising alternative to the traditional 3D perovskites due to their structural flexibility and higher environmental stability, though they lack the desired level of device efficiency. Doping with target ions can drastically tune the crystal structure, optical properties, charge recombination dynamics, and electronic properties of the 2D perovskite. Although the field of doping in 2D perovskites has seen substantial growth in recent times, no comprehensive review is available on the recent advances in doping of 2D perovskites and its effect on the optoelectronic properties. In this review, we summarize the progress in doping in 2D perovskites based on different doping sites including progress in different synthesis strategies and their impact on crystal structures and various optoelectronic properties. We then highlight the recent achievements in doped 2D perovskites for photovoltaic, LED and other emerging applications. Finally, we conclude with the challenges and the future scope in the doping studies of 2D layered perovskites, which need to be addressed for further developments of next-generation 2D perovskite-based optoelectronic devices.
引用
收藏
页码:995 / 1025
页数:31
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