Performance Comparison of FRD and SiC Schottky Diode in Si/SiC Hybrid Switch Power Module

被引：3

作者：

Zeng, Zhong ^{[1
]}

Li, Zongjian ^{[1
]}

Liu, Yizhe ^{[1
]}

He, Zhizhi ^{[1
]}

Jiang, Xi ^{[1
]}

Yu, Jiajun ^{[1
]}

Wang, Jun ^{[1
]}

机构：

[1] Hunan Univ, Coll Elect & Informat Engn, Changsha, Peoples R China

来源：

2020 IEEE 9TH INTERNATIONAL POWER ELECTRONICS AND MOTION CONTROL CONFERENCE (IPEMC2020-ECCE ASIA) | 2020年

关键词：

Hybrid switch; power module; Si FRD; SiC Schottky diode; switching loss;

D O I：

10.1109/IPEMC-ECCEAsia48364.2020.9367860

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The Si/SiC hybrid switch (HyS) power module concept of paralleling a main Si IGBT and an auxiliary SiC MOSFET offers an improved cost/performance tradeoff in power converter applications compared to the full SiC based solutions. The different freewheeling diodes inside the HyS module strongly influences the electrical and thermal performance of the HyS module. In this paper, the HyS power modules using silicon fast recovery diodes (FRD) and silicon carbide Schottky diode (SiC SBD) as the freewheeling diode are designed respectively, to compare the performance of these two freewheeling diode solutions. The basic operation principle, conduction and switching characteristics of the two diode configuration HyS power modules are directly compared. Experimental results show the SiC SBD solution achieve the better reverse recovery performance and comparable reverse conduction losses compared to the FRD solution.

引用

页码：1890 / 1893

页数：4

共 9 条

[1]

[Anonymous], 2017, Trans. Elect. Mach. Syst.

[2] Active Gate Delay Time Control of Si/SiC Hybrid Switch for Junction Temperature Balance Over a Wide Power Range [J].

Li, Zongjian ;

Wang, Jun ;

Deng, Linfeng ;

He, Zhizhi ;

Yang, Xing ;

Ji, Bing ;

Shen, Z. John .

IEEE TRANSACTIONS ON POWER ELECTRONICS, 2020, 35 (05) :5354-5365

[3] Performance Comparison of Two Hybrid Si/SiC Device Concepts [J].

Li, Zongjian ;

Wang, Jun ;

He, Zhizhi ;

Yu, Jiajun ;

Dai, Yuxing ;

Shen, Z. John .

IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS, 2020, 8 (01) :42-53

[4]

Li ZJ, 2018, APPL POWER ELECT CO, P1717, DOI 10.1109/APEC.2018.8341249

[5] Current Sharing Behavior in Si IGBT and SiC MOSFET Cross-Switch Hybrid [J].

Minamisawa, R. A. ;

Vemulapati, U. ;

Mihaila, A. ;

Papadopoulos, C. ;

Rahimo, M. .

IEEE ELECTRON DEVICE LETTERS, 2016, 37 (09) :1178-1180

[6] Characterization of a Silicon IGBT and Silicon Carbide MOSFET Cross-Switch Hybrid [J].

Rahimo, Munaf ;

Canales, Francisco ;

Minamisawa, Renato Amaral ;

Papadopoulos, Charalampos ;

Vemulapati, Umamaheswara ;

Mihaila, Andrei ;

Kicin, Slavo ;

Drofenik, Uwe .

IEEE TRANSACTIONS ON POWER ELECTRONICS, 2015, 30 (09) :4638-4642

[7]

Venmlapati UR, 2016, INT SYM POW SEMICOND, P163, DOI 10.1109/ISPSD.2016.7520803

[8] Gate Control Optimization of Si/SiC Hybrid Switch for Junction Temperature Balance and Power Loss Reduction [J].

Wang, Jun ;

Li, Zongjian ;

Jiang, Xi ;

Zeng, Cheng ;

Shen, Z. John .

IEEE TRANSACTIONS ON POWER ELECTRONICS, 2019, 34 (02) :1744-1754

[9]

Wang Y, 2015, J NANOMATER, V2015, P5, DOI DOI 10.1038/SREP18296

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