Ti-based ohmic contacts to p-type GaN/AlxGa1-xN superlattices

被引：0

作者：

Adesida, I ^{[1
]}

Zhou, L ^{[1
]}

Osinsky, A ^{[1
]}

Yang, JW ^{[1
]}

Khan, MA ^{[1
]}

机构：

[1] Univ Illinois, Dept Elect & Comp Engn, Microelect Lab, Urbana, IL 61801 USA

来源：

PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS | 2000年 / 1卷

关键词：

superlattices; ohmic contacts; activation energy; TLM; GaN; AlGaN; surface; sheet resistance;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Several metallization schemes were investigated as ohmic contacts to p-type GaN/AlxGa1-xN short period superlattices (SL). Ti-based metallizations such as Ti/Pt/Au, deposited after conventional surface cleaning procedures, compare favorably with other ohmic contacts such as Ni/Au and Pd/Au deposited after the "two-step" surface treatments. Temperature-dependent transmission line measurements (TLM) show flat specific contact resistances (R-c) within the temperature range from -55 degreesC to 200 degreesC for the contacts used in this study, indicating field emission as the main conduction mechanism. Semiconductor sheet resistances obtained through the sam measurement also demonstrate lowered dopant activation energies required for the SL, at approximately 60 meV for the GaN/Al0.2Ga0.8N SL and 90 meV for the GaN/Al0.1Ga0.9N SL, lower than the 200 meV required for p-GaN.

引用

页码：790 / 792

页数：3

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