Electronic structures of new tunnel barrier spinel MgAl2O4: first-principles calculations

The electronic structures of spinel MgAl2O4 and MgO tunnel barrier materials were investigated using first-principles density functional theory calculations. Our results show that similar electronic structures are found for the MgAl2O4 and MgO tunneling barriers. The calculated direct energy gaps at the I"-point are about 5.10 eV for MgAl2O4 and 4.81 eV for MgO, respectively. Because of the similar feature in band structures from I" high-symmetry point to F point (Delta band), the coherent tunneling effect might be expected to appear in MgAl2O4-based MTJs like in MgO-based MTJs. The small difference of the surface free energies of Fe (2.9 J center dot m(-2)) and MgAl2O4 (2.27 J center dot m(-2)) on the {100} orientation, and the smaller lattice mismatch between MgAl2O4 and ferromagnetic electrodes than that between MgO and ferromagnetic electrodes, the spinel MgAl2O4 can substitute MgO to fabricate the coherent tunneling and chemically stable magnetic tunnel junction structures, which will be applied in the next generation read heads or spintronic devices.