Dynamic SEU Sensitivity of Designs on Two 28-nm SRAM-Based FPGA Architectures

被引:27
作者
Keller, Andrew M. [1 ]
Whiting, Timothy A. [1 ]
Sawyer, Kenneth B. [1 ]
Wirthlin, Michael J. [1 ]
机构
[1] Brigham Young Univ, NSF Ctr High Performance Reconfigurable Comp, Provo, UT 84602 USA
基金
美国国家科学基金会;
关键词
Fault tolerace; field programmable gate arrays; neutron radiation effects; redundancy; static random access memory (SRAM) cells; BENCHMARKS; SYSTEMS; TMR;
D O I
10.1109/TNS.2017.2772288
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Two field-programmable gate array (FPGA) designs are tested for dynamic single event upset (SEU) sensitivity on two different 28-nm static random access memory-based FPGAs-an Intel Stratix V and a Xilinx Kintex 7 FPGA. These designs were tested in both a conventional unmitigated version and a version to tolerate SEUs with feedback triple modular redundancy (TMR). The unmitigated design sensitivity and the low-level device sensitivity were found to be similar between the devices through neutron radiation testing. Results also show that feedback TMR and configuration scrubbing benefit both designs on both FPGAs. While TMR is helpful, the benefit of TMR depends on the design structure and the device architecture. TMR and scrubbing reduced dynamic SEU sensitivity by a factor of 4-54 x.
引用
收藏
页码:280 / 287
页数:8
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