NEMO5: A Parallel Multiscale Nanoelectronics Modeling Tool

被引：143
作者：
Steiger, Sebastian [1 ]
Povolotskyi, Michael [1 ]
Park, Hong-Hyun [1 ]
Kubis, Tillmann [1 ]
Klimeck, Gerhard [1 ]
机构：
[1] Purdue Univ, Network Computat Nanotechnol, W Lafayette, IN 47907 USA
来源：
IEEE TRANSACTIONS ON NANOTECHNOLOGY | 2011年 / 10卷 / 06期
基金：
美国国家科学基金会;
关键词：
Modeling; multiphysics; multiscale; nanoelectronics; nanostructures; nonequilibrium Greens function formalism (NEGF); NEMO; phonons; Poisson; quantum dot; quantum well; quantum wire; Schrodinger; simulation; strain; transport; ATOMISTIC SIMULATION; QUANTUM; TRANSPORT; 3-D; SEMICONDUCTORS; PARAMETERS; ALGORITHM; SINGLE; STRAIN;
D O I：
10.1109/TNANO.2011.2166164
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The development of a new nanoelectronics modeling tool, NEMO5, is reported. The tool computes strain, phonon spectra, electronic band structure, charge density, charge current, and other properties of nanoelectronic devices. The modular layout enables a mix and match of physical models with different length scales and varying numerical complexity. NEMO5 features multilevel parallelization and is based on open-source packages. Its versatility is demonstrated with selected application examples: a multimillion-atom strain calculation, bulk electron and phonon band structures, a 1-D Schrodinger-Poisson simulation, a multiphysics simulation of a resonant tunneling diode, and quantum transport through a nanowire transistor.
引用
收藏
页码：1464 / 1474
页数：11
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