Coherent Plasmonic Interconnection in Silicon-Based Electrical Circuit

被引:16
作者
Aihara, T. [1 ]
Sakai, H. [1 ]
Takeda, A. [1 ]
Okahisa, S. [1 ]
Fukuhara, M. [1 ]
Ota, M. [1 ]
Ishii, Y. [1 ]
Fukuda, M. [1 ]
机构
[1] Toyohashi Univ Technol, Dept Elect & Elect Informat Engn, Toyohashi, Aichi 4418580, Japan
关键词
Monolithic integration; metal-oxide-semiconductor field-effect transistor (MOSFET); optical interconnection; plasmonic waveguide; Schottky diode; surface plasmon polariton (SPP); SEMICONDUCTOR-LASERS; WAVE-GUIDE; PERFORMANCE; MODULATORS; PHOTONICS; FILM;
D O I
10.1109/JLT.2015.2395537
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents a feasibility study of optical interconnections using surface plasmon polaritons (SPPs) as coherent carrier waves in a silicon-based electrical circuit. A gold film plasmonic waveguide and a gold/silicon Schottky-type plasmonic detector were monolithically integrated with an electrical circuit based on metal-oxide-semiconductor field-effect transistors on a silicon substrate. A 1550-nm-band laser source was used for SPP excitation, and the photocurrent generated by the plasmonic detector was amplified 16 000 times by the monolithically integrated electrical circuit after SPPs carrying the optical intensity signal propagated over the gold film surface for a distance of 100 mu m. The integrated circuit detected an optical beat signal by using a delayed self-homodyne technique, thus demonstrating that SPPs can be used as coherent carrier waves in the circuit. Additionally, optical amplitude- and frequency-modulated signal transmission in a gold film plasmonic waveguide and optical heterodyne detection by amplification of the signal intensity in a gold/silicon Schottky-type plasmonic detector were also demonstrated.
引用
收藏
页码:2139 / 2145
页数:7
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