Optical properties of ZnO/GaN heterostructure and its near-ultraviolet light-emitting diode

被引：106

作者：

Yu, QX ^{[1
]}

Xu, B

Wu, QH

Liao, Y

Wang, GZ

Fang, RC

Lee, HY

Lee, CT

机构：

[1] Univ Sci & Technol China, Dept Phys, Struct Res Lab, Hefei 230026, Anhui, Peoples R China

[2] Natl Cent Univ, Inst Opt Sci, Chungli 32054, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 23期

关键词：

D O I：

10.1063/1.1632029

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on photoluminescence in a ZnO/GaN heterostructure, which showed a donor-acceptor pair emission band at 3.270 eV and the longitudinal optical phonon replicas at 12 K. In comparison with p-type GaN, the positions of the peaks are redshifted. This may be associated with the variation of the residual strain in the GaN layer of the heterostructure. Using this heterostructure, near-ultraviolet light-emitting diodes were fabricated and their electroluminescence properties were characterized. (C) 2003 American Institute of Physics.

引用

页码：4713 / 4715

页数：3

共 17 条

[1] High temperature excitonic stimulated emission from ZnO epitaxial layers [J].

Bagnall, DM ;

Chen, YF ;

Zhu, Z ;

Yao, T ;

Shen, MY ;

Goto, T .

APPLIED PHYSICS LETTERS, 1998, 73 (08) :1038-1040

[2]

BALKAS GM, 1995, POWDER DIFFR, V10, P166

[3] HEAT-TREATMENT OF BIAS SPUTTERED ZNO FILMS [J].

CAPORALETTI, O .

SOLID STATE COMMUNICATIONS, 1982, 42 (02) :109-111

[4]

DAND GT, 2000, IEEE T ELECTRON DEV, V47, P692

[5] Fine structure of the edge ultraviolet luminescence of GaN:Mg films activated in a nitrogen plasma and the electroluminescence of a ZnO-GaN:Mg heterostructure based on these films [J].

Georgobiani, AN ;

Gruzintsev, AN ;

Vorob'ev, MO ;

Kaiser, U ;

Richter, W ;

Khodos, II .

SEMICONDUCTORS, 2001, 35 (06) :695-699

[6] OPTICALLY DETECTED MAGNETIC-RESONANCE OF GAN FILMS GROWN BY ORGANOMETALLIC CHEMICAL-VAPOR-DEPOSITION [J].

GLASER, ER ;

KENNEDY, TA ;

DOVERSPIKE, K ;

ROWLAND, LB ;

GASKILL, DK ;

FREITAS, JA ;

KHAN, MA ;

OLSON, DT ;

KUZNIA, JN ;

WICKENDEN, DK .

PHYSICAL REVIEW B, 1995, 51 (19) :13326-13336

[7] Room-temperature ultraviolet nanowire nanolasers [J].

Huang, MH ;

Mao, S ;

Feick, H ;

Yan, HQ ;

Wu, YY ;

Kind, H ;

Weber, E ;

Russo, R ;

Yang, PD .

SCIENCE, 2001, 292 (5523) :1897-1899

[8] Biexciton emission from high-quality ZnO films grown on epitaxial GaN by plasma-assisted molecular-beam epitaxy [J].

Ko, HJ ;

Chen, YF ;

Yao, T ;

Miyajima, K ;

Yamamoto, A ;

Goto, T .

APPLIED PHYSICS LETTERS, 2000, 77 (04) :537-539

[9] Long-term thermal stability of Ti/Al/Pt/Au Ohmic contacts to n-type GaN [J].

Lee, CT ;

Kao, HW .

APPLIED PHYSICS LETTERS, 2000, 76 (17) :2364-2366

[10] Investigation of indium tin oxide/zinc oxide multilayer ohmic contacts to n-type GaN isotype conjunction [J].

Lee, CT ;

Yu, QX ;

Tang, BT ;

Lee, HY ;

Hwang, FT .

APPLIED PHYSICS LETTERS, 2001, 78 (22) :3412-3414

← 1 2 →