Solution processing of active semiconducting polymers and conducting polymer anodes for fabricating photodetectors

被引:9
作者
Basavaraj, VK [1 ]
Manoj, AG [1 ]
Narayan, KS [1 ]
机构
[1] Indian Inst Sci, Jawaharlal Nehru Ctr Adv Sci Res, Mol Elect Lab, Chem & Phys Mat Unit, Bangalore 560064, Karnataka, India
来源
IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS | 2003年 / 150卷 / 06期
关键词
D O I
10.1049/ip-cds:20030947
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The light-detecting properties were studied for devices fabricated by a method involving screen-printing of an active semiconducting polymer layer. The active layer in the device is a blend consisting of an intrinsically n-type polymer poly(benzimidazobenzophenanthroline) dispersed in a matrix of intrinsically p-type polymer poly(3-octylthiophene). The anode in the device is a doped conducting polymer. The photocarrier generation efficiencies in the active layer are enhanced due to formation of donor acceptor networks at small length scales. The solution processing is advantageous in forming devices on flexible and curved substrates.
引用
收藏
页码:552 / 555
页数:4
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