Continuously Tunable Emission in Inverted Type-I CdS/CdSe Core/Crown Semiconductor Nanoplatelets

被引:57
作者
Delikanli, Savas [1 ]
Guzelturk, Burak [1 ,2 ]
Hernandez-Martinez, Pedro L. [1 ,2 ]
Erdem, Talha [1 ]
Kelestemur, Yusuf [1 ]
Olutas, Murat [1 ,3 ]
Akgul, Mehmet Zafer [1 ]
Demir, Hilmi V. [1 ,2 ]
机构
[1] Bilkent Univ, Dept Elect & Elect Engn, Dept Phys, UNAM Inst Mat Sci & Nanotechnol, TR-06800 Ankara, Turkey
[2] Nanyang Technol Univ, Sch Phys & Mat Sci, Sch Elect & Elect Engn, LUMINOUS Ctr Excellence Semicond Lighting & Displ, Singapore 639798, Singapore
[3] Abant Izzet Baysal Univ, Dept Phys, TR-14280 Bolu, Turkey
基金
欧盟第七框架计划;
关键词
CORE/SHELL NANOCRYSTALS; QUANTUM DOTS; GROWTH; THICKNESS;
D O I
10.1002/adfm.201500403
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The synthesis and unique tunable optical properties of core/crown nanoplatelets having an inverted Type-I heterostructure are presented. Here, colloidal 2D CdS/CdSe heteronanoplatelets are grown with thickness of four monolayers using seed-mediated method. In this work, it is shown that the emission peak of the resulting CdS/CdSe heteronanoplatelets can be continuously spectrally tuned between the peak emission wavelengths of the core only CdS nanoplatelets (421 nm) and CdSe nanoplatelets (515 nm) having the same vertical thickness. In these inverted Type-I nanoplatelets, the unique continuous tunable emission is enabled by adjusting the lateral width of the CdSe crown, having a narrower bandgap, around the core CdS nanoplatelet, having a wider bandgap, as a result of the controlled lateral quantum confinement in the crown region additional to the pure vertical confinement. As a proof-of-concept demonstration, a white light generation is shown by using color conversion with these CdS/CdSe heteronanoplatelets having finely tuned thin crowns, resulting in a color rendering index of 80. The robust control of the electronic structure in such inverted Type-I heteronanoplatelets achieved by tailoring the lateral extent of the crown coating around the core template presents a new enabling pathway for bandgap engineering in solution-processed quantum wells.
引用
收藏
页码:4282 / 4289
页数:8
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