High temperature measurements of metal contacts on epitaxial graphene

被引：33

作者：

Nagareddy, V. K. ^{[1
]}

Nikitina, I. P. ^{[1
]}

Gaskill, D. K. ^{[2
]}

Tedesco, J. L. ^{[2
]}

Myers-Ward, R. L. ^{[2
]}

Eddy, C. R. ^{[2
]}

Goss, J. P. ^{[1
]}

Wright, N. G. ^{[1
]}

Horsfall, A. B. ^{[1
]}

机构：

[1] Newcastle Univ, Sch Elect Elect & Comp Engn, Newcastle Upon Tyne NE1 7RU, Tyne & Wear, England

[2] USN, Res Lab, Washington, DC 20375 USA

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 07期

基金：

英国工程与自然科学研究理事会;

关键词：

RAMAN-SPECTROSCOPY; INTERFACE; SURFACES;

D O I：

10.1063/1.3627167

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electrical characteristics of Cr/Au and Ti/Au metal contacts on epitaxial graphene on 4H-SiC showed significant variations in resistance parameters at 300 K. These parameters decreased substantially as the temperature increased to 673 K. The work function, binding energy, and diffusion energy of the deposited metals were used to explain these observed variations. The quantitative analysis of our data demonstrates that non-reactive metals with higher work functions result in lower contact resistance, which can be further decreased by 70% using appropriate annealing. These results provide important information when considering epitaxial graphene for high temperature applications. (C) 2011 American Institute of Physics. [doi:10.1063/1.3627167]

引用

页数：3

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