Titanium silicon carbide pest induced by nitridation

被引:27
作者
Zhang, Haibin [1 ]
Zhou, Yanchun [1 ]
Bao, Yiwang [1 ]
Li, Meishuan [1 ]
机构
[1] Chinese Acad Sci, Met Res Inst, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
关键词
D O I
10.1111/j.1551-2916.2007.02018.x
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The thermal stability of bulk Ti3SiC2 in high-purity nitrogen was investigated. It was surprising to observe that Ti3SiC2 underwent rapid and catastrophic disintegration above 1300 degrees C, although this material was thermally stable below this temperature. This degradation was unexpected and extremely serious, and has been termed "Ti3SiC2 pest." This phenomenon was related to the volume change associated with the formation of mixtures of TiCx, Ti(C, N)(x), and TiN, which caused internal tensile stresses and cracked the resulting layers. "Ti3SiC2 pest" could be prevented by increasing oxygen partial pressure in nitrogen.
引用
收藏
页码:494 / 499
页数:6
相关论文
共 30 条
[1]   The topotactic transformation of Ti3SiC2 into a partially ordered cubic Ti(C0.67Si0.06) phase by the diffusion of Si into molten cryolite [J].
Barsoum, MW ;
El-Raghy, T ;
Farber, L ;
Amer, M ;
Christini, R ;
Adams, A .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1999, 146 (10) :3919-3923
[2]   The MN+1AXN phases:: A new class of solids;: Thermodynamically stable nanolaminates [J].
Barsoum, MW .
PROGRESS IN SOLID STATE CHEMISTRY, 2000, 28 (1-4) :201-281
[3]   Oxidation of Ti3SiC2 in air [J].
Barsoum, MW ;
ElRaghy, T ;
Ogbuji, LUJT .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1997, 144 (07) :2508-2516
[4]   Thermal properties of Ti3SiC2 [J].
Barsoum, MW ;
El-Raghy, T ;
Rawn, CJ ;
Porter, WD ;
Wang, H ;
Payzant, EA ;
Hubbard, CR .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1999, 60 (04) :429-439
[5]  
BERKOWIT.JB, 1965, T METALL SOC AIME, V233, P1093
[6]   Pulsed laser deposition of titanium-carbonitride thin films [J].
Capano, MA ;
Voevodin, AA ;
Bultman, JE ;
Zabinski, JS .
SCRIPTA MATERIALIA, 1997, 36 (10) :1101-1106
[7]   KINETICS OF MOSI2 PEST DURING LOW-TEMPERATURE OXIDATION [J].
CHOU, TC ;
NIEH, TG .
JOURNAL OF MATERIALS RESEARCH, 1993, 8 (07) :1605-1610
[8]   Diffusion kinetics of the carburization and silicidation of Ti3SiC2 [J].
El-Raghy, T ;
Barsoum, MW .
JOURNAL OF APPLIED PHYSICS, 1998, 83 (01) :112-119
[9]   Processing and mechanical properties of Ti3SiC2:: I, reaction path and microstructure evolution [J].
El-Raghy, T ;
Barsoum, MW .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1999, 82 (10) :2849-2854
[10]   Reaction of Al with Ti3SiC2 in the 800-1000°C temperature range [J].
El-Raghy, T ;
Barsoum, MW ;
Sika, M .
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 2001, 298 (1-2) :174-178