Review Paper: Transparent Amorphous Oxide Semiconductor Thin Film Transistor

被引：253

作者：

Kwon, Jang-Yeon ^{[1
]}

Lee, Do-Joong ^{[1
]}

Kim, Ki-Bum ^{[1
]}

机构：

[1] Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151742, South Korea

来源：

ELECTRONIC MATERIALS LETTERS | 2011年 / 7卷 / 01期

关键词：

Oxide semiconductor; thin film transistor; transparent; reliability; ZN-O; LOW-TEMPERATURE; INSTABILITY; STABILITY; DEVICE; FABRICATION;

D O I：

10.1007/s13391-011-0301-x

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin film transistors (TFTs) with oxide semiconductors have drawn great attention in the last few years, especially for large area electronic applications, such as high resolution active matrix liquid crystal displays (AMLCDs) and active matrix organic light-emitting diodes (AMOLEDs), because of their high electron mobility and spatial uniform property. This paper reviews and summarizes recent emerging reports that include potential applications, oxide semiconductor materials, and the impact of the fabrication process on electrical performance. We also address the stability behavior of such devices under bias/illumination stress and critical factors related to reliability, such as the gate insulator, the ambient and the device structure.

引用

页码：1 / 11

页数：11

共 79 条

[1] Low-temperature, high-performance solution-processed metal oxide thin-film transistors formed by a 'sol-gel on chip' process [J].

Banger, K. K. ;

Yamashita, Y. ;

Mori, K. ;

Peterson, R. L. ;

Leedham, T. ;

Rickard, J. ;

Sirringhaus, H. .

NATURE MATERIALS, 2011, 10 (01) :45-50

[2] AMORPHOUS INDIUM OXIDE [J].

BELLINGHAM, JR ;

PHILLIPS, WA ;

ADKINS, CJ .

THIN SOLID FILMS, 1991, 195 (1-2) :23-31

[3] A comparison of zinc oxide thin-film transistors on silicon oxide and silicon nitride gate dielectrics [J].

Carcia, P. F. ;

McLean, R. S. ;

Reilly, M. H. ;

Crawford, M. K. ;

Blanchard, E. N. ;

Kattamis, A. Z. ;

Wagner, S. .

JOURNAL OF APPLIED PHYSICS, 2007, 102 (07)

[4] High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer [J].

Chiang, HQ ;

Wager, JF ;

Hoffman, RL ;

Jeong, J ;

Keszler, DA .

APPLIED PHYSICS LETTERS, 2005, 86 (01) :013503-1

[5] Transparent Al-Zn-Sn-O thin film transistors prepared at low temperature [J].

Cho, Doo-Hee ;

Yang, Shinhyuk ;

Byun, Chunwon ;

Shin, Jaeheon ;

Ryu, Min Ki ;

Park, Sang-Hee Ko ;

Hwang, Chi-Sun ;

Chung, Sung Mook ;

Cheong, Woo-Seok ;

Yoon, Sung Min ;

Chu, Hye-Yong .

APPLIED PHYSICS LETTERS, 2008, 93 (14)

[6] Carrier-suppressing effect of scandium in InZnO systems for solution-processed thin film transistors [J].

Choi, Yuri ;

Kim, Gun Hee ;

Jeong, Woong Hee ;

Bae, Jung Hyeon ;

Kim, Hyun Jae ;

Hong, Jae-Min ;

Yu, Jae-Woong .

APPLIED PHYSICS LETTERS, 2010, 97 (16)

[7] Role of silicon in silicon-indium-zinc-oxide thin-film transistor [J].

Chong, Eugene ;

Kim, Seung Han ;

Lee, Sang Yeol .

APPLIED PHYSICS LETTERS, 2010, 97 (25)

[8] Directed integration of ZnO nanobridge devices on a Si substrate [J].

Conley, JF ;

Stecker, L ;

Ono, Y .

APPLIED PHYSICS LETTERS, 2005, 87 (22) :1-3

[9] Investigating the stability of zinc oxide thin film transistors [J].

Cross, R. B. M. ;

De Souza, M. M. .

APPLIED PHYSICS LETTERS, 2006, 89 (26)

[10] Impact of aluminum nitride as an insulator on the performance of zinc oxide thin film transistors [J].

De Souza, M. M. ;

Jejurikar, S. ;

Adhi, K. P. .

APPLIED PHYSICS LETTERS, 2008, 92 (09)

← 1 2 3 4 5 6 7 8 →