Analysis of temperature-dependent barrier heights in erbium-silicided Schottky diodes

被引：6

作者：

Jun, Myungsim ^{[1
]}

Jang, Moongyu ^{[1
]}

Kim, Yarkeon ^{[1
]}

Choi, Cheljong ^{[1
]}

Kim, Taeyoub ^{[1
]}

Oh, Soonyoung ^{[1
]}

Lee, Seongjae ^{[1
,2
]}

机构：

[1] ETRI, IT BT Grp, Nanobio Elect Devices Team, Taejon 305350, South Korea

[2] Hanyang Univ, Seoul 133791, South Korea

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2008年 / 26卷 / 01期

关键词：

D O I：

10.1116/1.2825172

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We manufactured erbium-silicided Schottky diodes on n-type and p-type silicon substrates to determine the Schottky barrier heights for electrons and holes, respectively. The effective barrier heights were extracted from the current-voltage-temperature characteristics of the Schottky diodes in reverse-bias condition. The barrier heights were obtained as a function of temperature, decreasing with the decrease of temperature. Low effective barrier heights at low temperature may be due to the trap-assisted current at the erbium silicide/silicon Schottky junction. The temperature-independent barrier heights for electrons and holes were evaluated to be 0.39 and 0.69 eV, respectively, at high temperature by fitting the effective barrier heights as a function of temperature. In this case, the carrier conduction mechanism can be explained by the pure thermionic emission model. (c) 2008 American Vacuum Society.

引用

页码：137 / 140

页数：4

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