Highly thermal-stable organic light-emitting diodes with a bulk heterojunction interfacial modification layer

被引：3
作者：
Wei, Bin [1 ,2 ]
Fan, Yuxuan [1 ]
Xu, Hanfei [3 ]
Yan, Limin [1 ]
Yang, Xuyong [2 ]
Lin, Yang [2 ]
Shi, Wei [2 ]
机构：
[1] Shanghai Univ, Microelect R&D Ctr, Sch Mechatron Engn & Automat, Shanghai 200072, Peoples R China
[2] Shanghai Univ, Sch Mechatron Engn & Automat, Key Lab Adv Display & Syst Applicat, Minist Educ, Shanghai 200072, Peoples R China
[3] Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200072, Peoples R China
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2022年 / 61卷 / 07期
基金：
中国国家自然科学基金;
关键词：
organic light-emitting diodes; thermal stability; bulk heterojunction; interfacial modification layer; GLASS-TRANSITION TEMPERATURE; HOLE-INJECTION; DEGRADATION; EFFICIENCY; STABILITY; DEVICES; PLASMA; OXIDE;
D O I：
10.35848/1347-4065/ac78b1
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report highly thermal-stable organic light-emitting diodes (OLEDs) by introducing an interfacial modification layer (IML), consisting of the N,N '-bis(naphthalen-1-yl)-N,N '-bis(phenyl)-benzidine (NPB):MoO3 bulk heterojunction. The IML can increase the thermal resistance of 4,4 '-cyclohexylidenebis[N,N-bis(4-methylphenyl)benzenamine] (TAPC) hole transport layer to be higher than its glass transition temperature. The OLED with the IML can endure a high temperature of 100 degrees C with a current efficiency of 51.82 cd A(-1) and a low-efficiency roll-off. The optimized thermal stability of OLED is not only due to the thermally stable IML but also resulted from the well-matched energy level between anode and TAPC with the help of IML.
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页数：5
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