Integrated CMOS-MEMS Technology and Its Applications

被引：26

作者：

Machida, K. ^{[1
,2
]}

Konishi, T. ^{[1
]}

Yamane, D. ^{[2
]}

Toshiyoshi, H. ^{[3
]}

Masu, K. ^{[2
]}

机构：

[1] NTT Adv Technology Corp, Atsugi, Kanagawa 2430124, Japan

[2] Tokyo Inst Technol, Midori Ku, Yokohama, Kanagawa 2268503, Japan

[3] Univ Tokyo, RCAST, Meguro Ku, Tokyo 1538904, Japan

来源：

INTERNATIONAL SYMPOSIUM ON FUNCTIONAL DIVERSIFICATION OF SEMICONDUCTOR ELECTRONICS 2 (MORE-THAN-MOORE 2) | 2014年 / 61卷 / 06期

关键词：

CAPACITIVE SILICON ACCELEROMETER; SENSOR;

D O I：

10.1149/06106.0021ecst

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The paper reports a feature and techniques to resolve requirements of integrated CMOS-MEMS technology. The multiphysics simulation platform for this technology has been developed to understand simultaneously both the mechanical and electrical behaviors of MEMS stacked on LSI. An equivalent circuit of a MEMS accelerometer has been developed with an electrical circuit simulator. We review the technology for CMOS-MEMS accelerometer with a wide detection range. Using the simulation platform above, we investigated the capacitive CMOS-MEMS sensor to a MEMS accelerometer implemented by the post-CMOS process onto CMOS circuit. As a result, it is confirmed that integrated CMOS-MEMS technology will shed light on a solution of More than Moore technical trends.

引用

页码：21 / 39

页数：19

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