Preparation of oxygen-containing Pt and Pt oxide thin films by reactive sputtering and their characterization

Oxygen-containing Pt and Pt oxide thin films were prepared by reactive sputtering in Ar and O-2 gas atmosphere and effects of oxygen flow ratio on crystallinity, chemical bonding state and resistivity were studied. Polycrystalline oxygen-containing Pt and amorphous Pt oxide thin films were obtained at O-2 flow ratios below 20% and above 30%; respectively. It is confirmed that these films are composed of the mixture of Pt, PtO and PtO2 and the oxygen content in these films increases with an increase in the O-2 flow ratio. Though PtOx films with x less than or equal to 0.6 show low resistivity with metallic conduction, those with higher oxygen content show semiconducting characteristics and their resistivity increases with increasing oxygen content.