Ge-Source Based L-Shaped Tunnel Field Effect Transistor for Low Power Switching Application

被引：27

作者：

Chander, Sweta ^{[1
]}

Sinha, Sanjeet Kumar ^{[1
]}

Chaudhary, Rekha ^{[1
]}

Singh, Avtar ^{[2
]}

机构：

[1] Lovely Profess Univ, Sch Elect & Elect Engn, Phagwara, Punjab, India

[2] Adama Univ Sci & Technol, Dept ECE, Adama, Ethiopia

来源：

SILICON | 2022年 / 14卷 / 13期

关键词：

Tunnel field effect transistor; Heterojucntion; Band-to-band tunneling; Ambipolarity; Subthreshold swing; GATE; TFET; FET;

D O I：

10.1007/s12633-021-01475-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In this work, the performance of the heterojunction L-Tunnel Field Effect Transistor (LTFET) has been analyzed with different engineering techniques such as bandgap engineering, pocket engineering, work-function engineering, and gate dielectric engineering, respectively. The electrical characteristics of the device has been investigated by using Synopsys Sentaurus TCAD tool and compared with some recent other TFETs. The device has been analyzed in terms of DC as well as AC analysis and offers ON-state current of 2.12*10(-5) A mu m(-1), OFF-state current of 1.09*10(-13) A mu m(-1), current ratio of similar to 10(8) and sub-threshold slope (SS) of 21 mV/decade and the threshold voltage of 0.26 V and compared to the conventional Si/Ge source L-shaped TFETs without pocket simulation result. The pocket engineering techniques suppress the leakage without degrading the ON current, threshold voltage and SS of the proposed device. The simplified fabrication steps of the proposed device have also been discussed. The proposed L-TFET is free from ambipolarity issues and can be used to develop low-power switching devices.

引用

页码：7435 / 7448

页数：14

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