Pt Schottky diode gas sensors formed on GaN and AlGaN/GaN heterostructure

被引：67
作者：
Matsuo, K [1 ]
Negoro, N
Kotani, J
Hashizume, T
Hasegawa, H
机构：
[1] Hokkaido Univ, Res Ctr Integrated Quantum Elect, Sapporo, Hokkaido 0608628, Japan
[2] Hokkaido Univ, Grad Sch Elect & Informat Engn, Sapporo, Hokkaido 0608628, Japan
来源：
APPLIED SURFACE SCIENCE | 2005年 / 244卷 / 1-4期
关键词：
GaN; AlGaN; Pt; Schottky; gas sensor;
D O I：
10.1016/j.apsusc.2004.10.149
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Exposure of Pt/GaN and Pt/AlGaN/GaN Schottky diodes to H-2 gas at moderately high temperatures around 100 degrees C resulted in marked increase of forward and reverse currents. Increase was much larger in the Pt/AlGaN/GaN diode than in the Pt/GaN diode. Rapid turn-on responses and somewhat slower turn-off responses were observed with reproducible response magnitudes. A rigorous computer simulation of I-V curves indicated that current changes are due to changes in the Schottky barrier height caused either by H-induced formation of interfacial dipole or by hydrogen passivation of interface states. (c) 2005 Published by Elsevier B.V.
引用
收藏
页码：273 / 276
页数：4
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