Data Movement and Aggregation in Flash Memories

被引:0
|
作者
Jiang, Anxiao [1 ]
Langberg, Michael [2 ]
Mateescu, Robert [3 ]
Bruck, Jehoshua [4 ]
机构
[1] Texas A&M Univ, CSE Dept, College Stn, TX 77843 USA
[2] Open Univ Israel, Comp Sci Div, IL-43107 Raanana, Israel
[3] Microsoft Res Cambridge, Cambridge CB3 0FB, England
[4] CALTECH, EE & CNS Dept, Pasadena, CA 91125 USA
来源
2010 IEEE INTERNATIONAL SYMPOSIUM ON INFORMATION THEORY | 2010年
关键词
D O I
10.1109/ISIT.2010.5513391
中图分类号
TP301 [理论、方法];
学科分类号
081202 ;
摘要
NAND flash memories have become the most widely used type of non-volatile memories. In a NAND flash memory, every block of memory cells consists of numerous pages, and rewriting a single page requires the whole block to be erased. As block erasures significantly reduce the longevity, speed and power efficiency of flash memories, it is critical to minimize the number of erasures when data are reorganized. This leads to the data movement problem, where data need to be switched in blocks, and the objective is to minimize the number of block erasures. It has been shown that optimal solutions can be obtained by coding. However, coding-based algorithms with the minimum coding complexity still remain an important topic to study. In this paper, we present a very efficient data movement algorithm with coding over GF(2) and with the minimum storage requirement. We also study data movement with more auxiliary blocks and present its corresponding solution. Furthermore, we extend the study to the data aggregation problem, where data can not only be moved but also aggregated. We present both non-coding and coding-based solutions, and rigorously prove the performance gain by using coding.
引用
收藏
页码:1918 / 1922
页数:5
相关论文
共 50 条
  • [31] Flash Memories: ISPP Renewal Theory and Flash Design Tradeoffs
    Asadi, Meysam
    Haratsch, Erich F.
    Kavcic, Aleksandar
    Santhanam, Narayana Prasad
    IEEE JOURNAL ON SELECTED AREAS IN COMMUNICATIONS, 2016, 34 (09) : 2325 - 2335
  • [32] Compression of short data blocks to improve the reliability of non-volatile flash memories
    Ahrens, Tobias
    Rajab, Mohammed
    Freudenberger, Juergen
    2016 INTERNATIONAL CONFERENCE ON INFORMATION AND DIGITAL TECHNOLOGIES (IDT), 2016, : 1 - 4
  • [33] DISTINGUISH ERASING METHODS FOR FLASH MEMORIES
    VILLOTT, M
    EDN, 1989, 34 (24) : 34 - 34
  • [34] Rank Modulation Hardware for Flash Memories
    Kim, Mina
    Park, Jong Kap
    Twigg, Christopher M.
    2012 IEEE 55TH INTERNATIONAL MIDWEST SYMPOSIUM ON CIRCUITS AND SYSTEMS (MWSCAS), 2012, : 294 - 297
  • [35] An Algorithm for Secure Deletion in Flash Memories
    Subha, S.
    2009 2ND IEEE INTERNATIONAL CONFERENCE ON COMPUTER SCIENCE AND INFORMATION TECHNOLOGY, VOL 4, 2009, : 260 - 262
  • [36] Rewritable Coset Coding for Flash Memories
    Chee, Yeow Meng
    Kiah, Han Mao
    Purkayastha, Punarbasu
    2014 IEEE INTERNATIONAL SYMPOSIUM ON INFORMATION THEORY (ISIT), 2014, : 2082 - 2086
  • [37] Rewriting Flash Memories by Message Passing
    Gad, Eyal En
    Huang, Wentao
    Li, Yue
    Bruck, Jehoshua
    2015 IEEE INTERNATIONAL SYMPOSIUM ON INFORMATION THEORY (ISIT), 2015, : 646 - 650
  • [38] Local Rank Modulation for Flash Memories
    Horovitz, Michal
    Etzion, Tuvi
    2014 IEEE INFORMATION THEORY WORKSHOP (ITW), 2014, : 606 - 610
  • [39] Covering codes for Multilevel Flash Memories
    Haymaker, Kathryn
    Kelley, Christine A.
    2012 CONFERENCE RECORD OF THE FORTY SIXTH ASILOMAR CONFERENCE ON SIGNALS, SYSTEMS AND COMPUTERS (ASILOMAR), 2012, : 942 - 949
  • [40] Program schemes for multilevel Flash memories
    Grossi, M
    Lanzoni, M
    Riccò, B
    PROCEEDINGS OF THE IEEE, 2003, 91 (04) : 594 - 601