Linear dependence of post-irradiation input bias currents on pre-irradiation values in silicon bipolar microcircuits

被引：1

作者：

Song, Yu ^{[1
,2
,3
]}

Zhao, Jie ^{[2
,3
,4
]}

Li, Shun ^{[2
,3
]}

Hou, Shi-Yao ^{[2
,3
,5
,6
]}

Zhou, Hang ^{[2
,3
]}

Liu, Yang ^{[2
,3
]}

Zhang, Ying ^{[2
,3
]}

Meng, Dechao ^{[2
,3
]}

Dai, Gang ^{[2
,3
]}

Zhang, Jian ^{[7
]}

机构：

[1] Neijiang Normal Univ, Coll Phys & Elect Informat Engn, Neijiang 641112, Peoples R China

[2] China Acad Engn Phys, Microsyst & Terahertz Res Ctr, Chengdu 610200, Peoples R China

[3] China Acad Engn Phys, Inst Elect Engn, Chengdu 610200, Peoples R China

[4] Peng Cheng Lab, Ctr Circuits & Syst, Shenzhen 518055, Peoples R China

[5] Sichuan Normal Univ, Coll Phys & Elect Engn, Chengdu 610068, Peoples R China

[6] Sichuan Normal Univ, Ctr Computat Sci, Chengdu 610068, Peoples R China

[7] Univ Elect Sci & Technol China, Sch Elect Sci & Engn, Chengdu 611731, Peoples R China

来源：

MICROELECTRONICS RELIABILITY | 2021年 / 123卷

关键词：

Silicon bipolar microcircuits; Input bias currents; Ionization damage; Linear regression model; Interface traps; Si-H bonds; Density of state; Damage prediction method; TOTAL-DOSE RESPONSE; RADIATION DEGRADATION; VOLTAGE COMPARATOR; GAIN DEGRADATION; P-TYPE; IRRADIATION; MECHANISMS; HYDROGEN; VARIABILITY; SENSITIVITY;

D O I：

10.1016/j.microrel.2021.114238

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We find in experiments a linear dependence of ionization irradiation-induced degradations on pre-irradiation values of the input bias current in bipolar devices with simple input stages. The dependence is found to generally exist in all studied cases of different device types and different irradiation conditions. A unique behavior of the energy distribution of the interface states (D-it) under irradiation is suggested as the origin of the observed phenomenon: the generation of interface traps through the depassivation of Si-H bonds located near the pre-irradiation interface traps displays a D-it as an enlargement of the initial D-it and results in the general linear dependence. A more accurate damage prediction method by using the pre-irradiation values is proposed based on the observed phenomenon.

引用

页数：8

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