Preparation of anodic porous alumina mask with ideally arranged holes on InP single crystals

被引：4
|
作者：
Yasui, K
Sakamoto, Y
Nishio, K
Masuda, H
机构：
[1] Tokyo Metropolitan Univ, Dept Appl Chem, Hachioji, Tokyo 1920397, Japan
[2] KAST, Sagamihara, Kanagawa 2291131, Japan
来源：
CHEMISTRY LETTERS | 2005年 / 34卷 / 03期
关键词：
D O I：
10.1246/cl.2005.342
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Anodic porous alumina mask with ideally arranged holes was formed on InP single crystals. This process has advantageous in the achievement of nanofabrication with uniformity and reproducibility due to the mask being formed with sufficient adhesion on the InP. The masks formed by this process, was confirmed to applicable for the dry-process mask.
引用
收藏
页码：342 / 343
页数：2
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