Studies of luminescence properties of ZnO and ZnO:Zn nanorods prepared by solution growth technique

被引:100
|
作者
Patra, M. K. [1 ]
Manzoor, K. [1 ]
Manoth, M. [1 ]
Vadera, S. R. [1 ]
Kumar, N. [1 ]
机构
[1] Def Lab, Jodhpur 342011, Rajasthan, India
关键词
nanostructures; semiconductor; luminescence;
D O I
10.1016/j.jlumin.2007.08.005
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Pyramidal ZnO nanorods with hexagonal structure having c-axis preferred orientation are grown over large area silica substrates by a simple aqueous solution growth technique. The as-grown nanorods were studied using XRD, SEM and UV-vis photoiuminescence (PL) spectroscopy for their structural, morphological and optical properties, respectively. Further, the samples have also been annealed under different atmospheric conditions (air, O-2, N-2 and Zn) to study the defect formation in nanorods. The PL spectra of the as-grown nanorods show narrow-band excitonic emission at 3.03 eV and a broad-band deep-level emission (DLE) related to the defect centers at 2.24eV. After some mild air annealing at 200 degrees C, fine structures with peaks having energy separation of similar to 100meV were observed in the DLE band and the same have been attributed to the longitudinal optical (LO) phonon-assisted transitions. However, the annealing of the samples under mild reducing atmospheres of N-2 Or zinc at 550 degrees C resulted in significant modifications in the DLE band wherein high intensity green emission with two closely spaced peaks with maxima at 2.5 and 2.7 eV were observed which have been attributed to the V-O and Zn-i defect centers, respectively. The V-I characteristic of the ZnO:Zn nanorods shows enhancement in n-type conductivity compared to other samples. The studies thus suggest that the green emitting ZnO:Zn nanorods can be used as low voltage field emission display (FED) phosphors with nanometer scale resolution. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码:267 / 272
页数:6
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