Current-voltage characteristics of p+-n SiC junctions fabricated by low-temperature liquid phase epitaxy

被引：0
作者：
Tanaka, Akira [1 ]
Ota, Yuichi [1 ]
Katsuno, Hironobu [1 ]
机构：
[1] Shizuoka Univ, Elect Res Inst, Hamamatsu, Shizuoka 4328011, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2007年 / 46卷 / 8A期
关键词：
silicon carbide; heavily doping; p(+)-n junction; liquid phase epitaxy;
D O I：
10.1143/JJAP.46.5131
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
p(+)-Layers containing Al at about 1 at. % were grown on an n-type substrate in Al-Si solution reacted with propane gas at 950 C, and cleaved into prototype diodes. The current-voltage (I-V) characteristics showed a rectification behavior of a p-n junction formed between the grown layer and the substrate. It was implied that many defects acting as strong recombination centers exist over the entire grown p(+) layer. Contamination by oxygen and nitrogen was also observed in the grown layer.
引用
收藏
页码：5131 / 5132
页数：2
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