Effect of Te doping on superconductivity and charge-density wave in dichalcogenides 2H-NbSe2-xTex (x=0, 0.1, 0.2)

被引:1
作者
Wang, Hong-Tao
Li, Lin-Jun
Ye, De-Shu
Cheng, Xin-Hong
Xu, Zhu-An [1 ]
机构
[1] Wenzhou Univ, Dept Phys & Informat Sci, Wenzhou 325027, Peoples R China
[2] Zhejiang Univ, Dept Phys, Hangzhou 310027, Peoples R China
来源
CHINESE PHYSICS | 2007年 / 16卷 / 08期
关键词
low-dimensional metal; superconductivity; charge-density wave; disorder;
D O I
暂无
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Single crystals of Te-doped dichalcogenides 2H2H-NbSe2-Te-x(x) (x = 0, 0.10, 0.20) were grown by vapour transport method. The effect of Te doping on the superconducting and charge-density wave (CDW) transitions has been investigated . The sharp decrease of residual resistance ratio, RRR = R(300K)/R(8K), with increasing Te content was observed, indicating that the disorder in the conducting plane is induced by Te doping. Mean while the superconducting transition temperature, T-c, decreases monotonically with Te content. However, the CDW transition temperature, T-CDW, shown by a small jump in the temperature dependence of the resistivity near 30 K, increases slightly. The results show that the suppression of superconductivity might be caused by the enhancement of CDW ordering. The disorder has little influence on the CDW ordering.
引用
收藏
页码:2471 / 2474
页数:4
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