A thin film of a type II Ge clathrate epitaxially grown on a Ge substrate

被引：19

作者：

Kume, Tetsuji ^{[1
,2
]}

Ban, Takayuki ^{[2
,3
]}

Ohashi, Fumitaka ^{[1
]}

Jha, Himanshu S. ^{[1
]}

Sugiyama, Tomoya ^{[4
]}

Ogura, Takuya ^{[2
]}

Sasaki, Shigeo ^{[1
,2
]}

Nonomura, Shuichi ^{[4
]}

机构：

[1] Gifu Univ, Fac Engn, Dept Elect Elect & Comp Engn, Gifu, Japan

[2] Gifu Univ, Grad Sch Engn, Div Mat Sci & Technol, Gifu, Japan

[3] Gifu Univ, Fac Engn, Dept Chem & Biomol Sci, Gifu, Japan

[4] Gifu Univ, Grad Sch Engn, Div Environm & Renewable Energy Syst, 1-1 Yanagido, Gifu 5011193, Japan

来源：

CRYSTENGCOMM | 2016年 / 18卷 / 30期

基金：

日本科学技术振兴机构;

关键词：

CRYSTALLINE SILICON; RAMAN-SCATTERING; HIGH-PRESSURE; SI; NAXSI136; SEMICONDUCTORS; DECOMPOSITION; SPECTROSCOPY; GERMANIUM; NA24SI136;

D O I：

10.1039/c6ce01148a

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A thin film of a type II Ge clathrate, NaxGe136, was epitaxially grown on a (111) substrate of Ge with a diamond structure (alpha-Ge). A Zintl phase NaGe film was synthesized in advance by a reaction of the substrate surface with Na vapor under an Ar atmosphere, and was highly oriented such that the NaGe(100) planes were parallel to the Ge(111) surface. The NaGe film was transformed to the NaxGe136 film by heat treatment under dynamic vacuum. XRD measurements demonstrated that the prepared film consisting of twin crystals with a (111) twin plane was epitaxially grown with the < 111 > direction normal to the substrate surface. It was also suggested that the lattice mismatch between NaxGe136 and the Ge substrate is relaxed by a buffer layer of alpha-Ge having a triple-period superlattice. The electrical resistivity of the NaxGe136 film was estimated from the I-V measurements to be in the order of 10(1)-10(2) Omega m.

引用

页码：5630 / 5638

页数：9