Highly Stable Transparent Amorphous Oxide Semiconductor Thin-Film Transistors Having Double-Stacked Active Layers

被引：139

作者：

Park, Jae Chul ^{[2
]}

Kim, Sangwook ^{[2
]}

Kim, Sunil ^{[2
]}

Kim, Changjung ^{[2
]}

Song, Ihun ^{[2
]}

Park, Youngsoo ^{[2
]}

Jung, U-In ^{[2
]}

Kim, Dae Hwan ^{[1
]}

Lee, Jang-Sik ^{[3
]}

机构：

[1] Kookmin Univ, Sch Elect Engn, Seoul 136702, South Korea

[2] Samsung Adv Inst Technol, Yongin 446712, South Korea

[3] Kookmin Univ, Sch Adv Mat Engn, Seoul 136702, South Korea

来源：

ADVANCED MATERIALS | 2010年 / 22卷 / 48期

关键词：

ELECTRONIC-STRUCTURE; CARRIER TRANSPORT; A-INGAZNO4-X; DISPLAY; ORIGINS; TFT;

D O I：

10.1002/adma.201002397

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A novel device structure is presented for amorphous oxide semiconductor thin-film transistors with high performance as well as improved electrical/optical stress stability. The highly stable transistor devices are developed using composition-modulated dual active layers. This approach could potentially be used to fabricate product-level display devices using amorphous oxide semiconductors in the near future.

引用

页码：5512 / 5516

页数：5

共 26 条

[1] A low-cost stable amorphous silicon AMOLED display with full VT- and VOLED shift compensation [J].

Chaji, G. Reza ;

Alexander, Stefan ;

Nathan, Arokia ;

Church, Corbin ;

Tang, S. J. .

2007 SID INTERNATIONAL SYMPOSIUM, DIGEST OF TECHNICAL PAPERS, VOL XXXVIII, BOOKS I AND II, 2007, 38 :1580-+

[2] Recent progress in transparent oxide semiconductors: Materials and device application [J].

Hosono, Hideo .

THIN SOLID FILMS, 2007, 515 (15) :6000-6014

[3] Ionic amorphous oxide semiconductors: Material design, carrier transport, and device application [J].

Hosono, Hideo .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 2006, 352 (9-20) :851-858

[4]

Ito M, 2005, IDW/AD '05: PROCEEDINGS OF THE 12TH INTERNATIONAL DISPLAY WORKSHOPS IN CONJUNCTION WITH ASIA DISPLAY 2005, VOLS 1 AND 2, P845

[5] Application of amorphous oxide TFT to electrophoretic display [J].

Ito, M. ;

Miyazaki, C. ;

Ishizaki, M. ;

Kon, M. ;

Ikeda, N. ;

Okubo, T. ;

Matsubara, R. ;

Hatta, K. ;

Ugajin, Y. ;

Sekine, N. .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 2008, 354 (19-25) :2777-2782

[6] Front drive display structure for color electronic paper using fully transparent amorphous oxide TFT array [J].

Ito, Manabu ;

Kon, Masato ;

Miyazaki, Chihiro ;

Ikeda, Noriaki ;

Ishizaki, Mamoru ;

Ugajin, Yoshiko ;

Sekine, Norimasa .

IEICE TRANSACTIONS ON ELECTRONICS, 2007, E90C (11) :2105-2111

[7]

Jeong J.K., 2008, SID INT S DIGEST TEC, P1, DOI DOI 10.1109/HICSS.2008.208

[8] Investigating addition effect of hafnium in InZnO thin film transistors using a solution process [J].

Jeong, Woong Hee ;

Kim, Gun Hee ;

Shin, Hyun Soo ;

Du Ahn, Byung ;

Kim, Hyun Jae ;

Ryu, Myung-Kwan ;

Park, Kyung-Bae ;

Seon, Jong-Baek ;

Lee, Sang Yoon .

APPLIED PHYSICS LETTERS, 2010, 96 (09)

[9] Electronic structure of oxygen deficient amorphous oxide semiconductor a-InGaZnO4-x:: Optical analyses and first-principle calculations [J].

Kamiya, Toshio ;

Nomura, Kenji ;

Hirano, Masahiro ;

Hosono, Hideo .

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 9, 2008, 5 (09) :3098-+

[10] Origins of High Mobility and Low Operation Voltage of Amorphous Oxide TFTs: Electronic Structure, Electron Transport, Defects and Doping [J].

Kamiya, Toshio ;

Nomura, Kenji ;

Hosono, Hideo .

JOURNAL OF DISPLAY TECHNOLOGY, 2009, 5 (07) :273-288

← 1 2 3 →