A Novel Read Tracking Circuit Design Based on Compensation Circuit

被引:0
|
作者
Li Erliang [1 ]
Zhang Lijun [1 ]
Li Youzhong [1 ]
Zhang Qixiao [1 ]
Jiang Wei [1 ]
Hu Yuqing [1 ]
机构
[1] Soochow Univ, Sch Urban Rail Transportat, Suzhou 215000, Jiangsu, Peoples R China
来源
2014 12TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT) | 2014年
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D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In common SRAM read tracking circuit, process and temperature fluctuations may cause SRAM read failure. Thus, a novel read tracking circuit is proposed using corner compensation technology and temperature compensation technology in this paper. The proposed tracking circuit compensates the dummy bit line for different current when working in different process corners and temperature, which dramatically reduces the impact of process corner and temperature. The proposed circuit is simulated based on the 28nm CMOS process and the result proved that the proposed circuit is valid and reliable.
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页数:3
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