Ultraviolet light emitting diodes using non-polar a-plane GaN-AlGaN multiple quantum wells

被引：91

作者：

Chen, CQ ^{[1
]}

Adivarahan, V ^{[1
]}

Yang, JW ^{[1
]}

Shatalov, M ^{[1
]}

Kuokstis, E ^{[1
]}

Khan, MA ^{[1
]}

机构：

[1] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2003年 / 42卷 / 9AB期

关键词：

a-plane GaN; non-polar; pn junction; MQWs; UV LED;

D O I：

10.1143/JJAP.42.L1039

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a pn-junction ultraviolet light-emitting diode (LED) with peak emission at 363 nm using a-plane GaN-AlGaN multiple quantum wells over r-plane sapphire. The peak emission wavelength does not shift with increasing pump currents-therefore establishing the feasibility of high-efficiency non-polar light emitting devices.

引用

页码：L1039 / L1040

页数：2

共 7 条

[1] ADIVARAHAN V, UNPUB JPN J APPL PHY
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Chen, CQ
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[6] Two mechanisms of blueshift of edge emission in InGaN-based epilayers and multiple quantum wells
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[J]. APPLIED PHYSICS LETTERS, 2002, 80 (06) : 977 - 979
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