Study on Time Constants of Random Telegraph Noise in Gate Leakage Current Through Hot-Carrier Stress Test

被引：7

作者：

Cho, Heung-Jae ^{[1
,2
]}

Son, Younghwan ^{[1
,2
]}

Oh, Byoung-Chan ^{[1
,2
]}

Lee, Sanghoon ^{[1
,2
]}

Lee, Jong-Ho ^{[1
,2
]}

Park, Byung-Gook ^{[1
,2
]}

Shin, Hyungcheol ^{[1
,2
]}

机构：

[1] Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 151742, South Korea

[2] Seoul Natl Univ, Sch Elect Engn, Seoul 151742, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2010年 / 31卷 / 09期

关键词：

Hot-carrier stress; random telegraph noise (RTN); random telegraph noise in gate leakage current (I-g RTN); time constants; I-G-RTN; OXIDE; TRAPS; EXTRACTION;

D O I：

10.1109/LED.2010.2053694

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Capture and emission time constants obtained from random telegraph noise in gate leakage current (I-g RTN) are studied by characterizing an intentionally created trap in thin gate oxide (2.6 nm) in metal-oxide-semiconductor field-effect transistors (MOSFETs). The single oxide trap was generated at the drain edge region in virgin nMOSFETs by drain-avalanche hot-carrier stress. By analyzing the location and energy level of the trap extracted from the experimental data, the time constants of high and low current levels in I-g RTN were found to be capture and emission times, respectively.

引用

页码：1029 / 1031

页数：3

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