Electrodeposition of nanocrystalline Cu for Cu-Cu direct bonding

被引:35
作者
Jhan, Jhih-Jhu [1 ]
Wataya, Kazutoshi [2 ,3 ]
Nishikawa, Hiroshi [2 ]
Chen, Chih-Ming [1 ,4 ]
机构
[1] Natl Chung Hsing Univ, Dept Chem Engn, 145 Xingda Rd, Taichung 402, Taiwan
[2] Osaka Univ, Joining & Welding Res Inst, 11-1 Mihogaoka, Ibaraki, Osaka 5670047, Japan
[3] Osaka Univ, Grad Sch Engn, 11-1 Mihogaoka, Ibaraki, Osaka 5670047, Japan
[4] Natl Chung Hsing Univ, Innovat & Dev Ctr Sustainable Agr IDCSA, Taichung 402, Taiwan
关键词
Electrodeposition; Cu-Cu bonding; Microstructure; Nanograin; Grain growth; INTERFACIAL REACTIONS; FILMS; OXIDATION; JOINT;
D O I
10.1016/j.jtice.2021.10.027
中图分类号
TQ [化学工业];
学科分类号
0817 ;
摘要
Background: Cu-Cu direct bonding is a promising technology to construct a temperature resistant bonding structure for emerging power devices and vehicle electronics. The main challenge is the ease oxidation of Cu and slow solid-state atomic diffusion at the bonding surface. Methods: In this study, nanocrystalline Cu is constructed on the bonding surfaces using electrodeposition and direct bonding is carried out in a formic acid atmosphere. Microstructural and strength analyses are performed to investigate the bonding performance of the Cu-Cu joints. Significant findings: The bonding strength analysis indicates that a well-bonded Cu-Cu joint with a high shear strength of 71 MPa can be achieved by direct bonding of two Cu surfaces with a nanocrystalline structure (average grain size = 78 nm). Microstructural analysis shows that significant grain growth accompanying formation of twins at the bonding interface contribute to high bonding strength, which is attributed to enhanced atomic diffusion on the nanocrystalline Cu surfaces. (C) 2021 Taiwan Institute of Chemical Engineers. Published by Elsevier B.V. All rights reserved.
引用
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页数:8
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共 31 条
[1]   Interfacial reactions and mechanical properties of ball-grid-array solder joints using Cu-cored solder balls [J].
Chen, Chih-Ming ;
Lin, Huei-Chuan .
JOURNAL OF ELECTRONIC MATERIALS, 2006, 35 (11) :1937-1947
[2]   Interfacial reactions in the Co/In/Cu and Ni/In/Cu samples [J].
Chen, Sinn-Wen ;
Yang, Tsu-Ching ;
Lin, Ji-Min ;
Huang, Tse-Yang .
JOURNAL OF THE TAIWAN INSTITUTE OF CHEMICAL ENGINEERS, 2019, 97 :356-369
[3]   Enhanced Cu-to-Cu direct bonding by controlling surface physical properties [J].
Chiang, Po-Hao ;
Liang, Sin-Yong ;
Song, Jenn-Ming ;
Huang, Shang-Kun ;
Chiu, Ying-Ta ;
Hung, Chih-Pin .
JAPANESE JOURNAL OF APPLIED PHYSICS, 2017, 56 (03)
[4]   Pressure-assisted sinter bonding method at 300 °C in air using a resin-free paste containing 1.5 μm Cu@Ag particles [J].
Choi, Eun Byeol ;
Lee, Jong-Hyun .
APPLIED SURFACE SCIENCE, 2021, 546
[5]   An Overview of Patterned Metal/Dielectric Surface Bonding: Mechanism, Alignment and Characterization [J].
Di Cioccio, L. ;
Gueguen, P. ;
Taibi, R. ;
Landru, D. ;
Gaudin, G. ;
Chappaz, C. ;
Rieutord, F. ;
de Crecy, F. ;
Radu, I. ;
Chapelon, L. L. ;
Clavelier, L. .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2011, 158 (06) :P81-P86
[6]   Reduction reaction analysis of nanoparticle copper oxide for copper direct bonding using formic acid [J].
Fujino, Masahisa ;
Akaike, Masatake ;
Matsuoka, Naoya ;
Suga, Tadatomo .
JAPANESE JOURNAL OF APPLIED PHYSICS, 2017, 56 (04)
[7]   Cu to Cu direct bonding at low temperature with high density defect in electrodeposited Cu [J].
Han, Haneul ;
Lee, Chaerin ;
Kim, Youjung ;
Lee, Jinhyun ;
Kim, Rosa ;
Kim, Jongryoul ;
Yoo, Bongyoung .
APPLIED SURFACE SCIENCE, 2021, 550
[8]   Native oxidation of ultra high purity Cu bulk and thin films [J].
Iijima, J. ;
Lim, J. -W. ;
Hong, S. -H. ;
Suzuki, S. ;
Mimura, K. ;
Isshiki, A. .
APPLIED SURFACE SCIENCE, 2006, 253 (05) :2825-2829
[9]   Copper-to-copper direct bonding on highly (111)-oriented nanotwinned copper in no-vacuum ambient [J].
Juang, Jing-Ye ;
Lu, Chia-Ling ;
Chen, Kuan-Ju ;
Chen, Chao-Chang A. ;
Hsu, Po-Ning ;
Chen, Chih ;
Tu, K. N. .
SCIENTIFIC REPORTS, 2018, 8
[10]   Recent advances in free-standing single crystalline wide band-gap semiconductors and their applications: GaN, SiC, ZnO, β-Ga2O3, and diamond [J].
Kim, Munho ;
Seo, Jung-Hun ;
Singisetti, Uttam ;
Ma, Zhenqiang .
JOURNAL OF MATERIALS CHEMISTRY C, 2017, 5 (33) :8338-8354