Passivity of memristor-based BAM neural networks with different memductance and uncertain delays

被引:44
作者
Anbuvithya, R. [1 ]
Mathiyalagan, K. [2 ]
Sakthivel, R. [3 ,4 ]
Prakash, P. [5 ]
机构
[1] Natl Inst Technol, Dept Math, Tiruchirappalli 620015, Tamil Nadu, India
[2] Anna Univ, Dept Math, Reg Ctr, Coimbatore 641047, Tamil Nadu, India
[3] Sri Ramakrishna Inst Technol, Dept Math, Coimbatore 641010, Tamil Nadu, India
[4] Sungkyunkwan Univ, Dept Math, Suwon 440746, South Korea
[5] Periyar Univ, Dept Math, Salem 636011, India
关键词
Memristor; BAM neural networks; Passivity; Linear matrix inequality; Uncertain delay; TIME-VARYING DELAY; H-INFINITY CONTROL; EXPONENTIAL PASSIVITY; ROBUST STABILITY; SYNCHRONIZATION; STABILIZATION; DISCRETE; CRITERIA; SYSTEMS;
D O I
10.1007/s11571-016-9385-1
中图分类号
Q189 [神经科学];
学科分类号
071006 ;
摘要
This paper addresses the passivity problem for a class of memristor-based bidirectional associate memory (BAM) neural networks with uncertain time-varying delays. In particular, the proposed memristive BAM neural networks is formulated with two different types of memductance functions. By constructing proper Lyapunov-Krasovskii functional and using differential inclusions theory, a new set of sufficient condition is obtained in terms of linear matrix inequalities which guarantee the passivity criteria for the considered neural networks. Finally, two numerical examples are given to illustrate the effectiveness of the proposed theoretical results.
引用
收藏
页码:339 / 351
页数:13
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