Hydrogen Dilution-Induced Chemical State Modification in Silicon Nanowires

被引：13
作者：
Swain, Bhabani S. [2 ]
Swain, Bibhu P. [1 ]
Hwang, Nong M. [2 ]
机构：
[1] Natl Inst Adv Ind Sci & Technol, Res Ctr Photovolta, Tsukuba, Ibaraki, Japan
[2] Seoul Natl Univ, Dept Mat Sci & Engn, Natl Res Lab Charged Nanoparticles, Seoul, South Korea
来源：
JOURNAL OF PHYSICAL CHEMISTRY C | 2010年 / 114卷 / 36期
关键词：
H-2; DILUTION; SI NANOWIRES; HWCVD; FILMS; MECHANISM; GROWTH; DEPOSITION;
D O I：
10.1021/jp102241a
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The effect of hydrogen dilution on the microstructure and chemical state modification of SiNWs was studied. Au-catalyzed silicon nanowires (SiNWs) were grown by atmospheric chemical vapor deposition at ambient pressure using SiH4 as a silicon source and varying the hydrogen flow rate. The obtained SiNWs were straight and coil mixed with an average diameter in the range of 60-80 nm. The as-synthesized SiNWs were characterized by field emission scanning electron microscope, X-ray photoelectron spectroscopy, and Fourier transform infrared spectroscopy. The chemical states of Si(2p) core orbital shifted to lower energy and the silicon content of SiNWs increased from 41 to 45 atom To with increasing of hydrogen dilution. The bonding network of silicon and oxygen was analyzed by bonding strength and functional species present in the SiNWs.
引用
收藏
页码：15274 / 15279
页数：6
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