A pseudo-single-crystalline germanium film for flexible electronics

被引：46

作者：

Higashi, H. ^{[1
]}

Kasahara, K. ^{[2
]}

Kudo, K. ^{[3
]}

Okamoto, H. ^{[3
]}

Moto, K. ^{[3
]}

Park, J. -H. ^{[2
]}

Yamada, S. ^{[1
]}

Kanashima, T. ^{[1
]}

Miyao, M. ^{[2
]}

Tsunoda, I. ^{[3
]}

Hamaya, K. ^{[1
]}

机构：

[1] Osaka Univ, Grad Sch Engn Sci, Toyonaka, Osaka 5608531, Japan

[2] Kyushu Univ, Dept Elect, Fukuoka 8190395, Japan

[3] Kumamoto Natl Coll Technol, Kumamoto 8611102, Japan

来源：

APPLIED PHYSICS LETTERS | 2015年 / 106卷 / 04期

基金：

日本学术振兴会;

关键词：

EPITAXIAL-GROWTH; GE FILMS; LAYER; TRANSISTORS; SUBSTRATE; SEMICONDUCTORS; TEMPERATURE; INSULATORS; AL2O3;

D O I：

10.1063/1.4906612

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate large-area (similar to 600 mu m), (111)-oriented, and high-crystallinity, i.e., pseudo-single-crystalline, germanium (Ge) films at 275 degrees C, where the temperature is lower than the softening temperature of a flexible substrate. A modulated gold-induced layer exchange crystallization method with an atomic-layer deposited Al2O3 barrier and amorphous-Ge/Au multilayers is established. From the Raman measurements, we can judge that the crystallinity of the obtained Ge films is higher than those grown by aluminum-induced-crystallization methods. Even on a flexible substrate, the pseudo-single-crystalline Ge films for the circuit with thin-film transistor arrays can be achieved, leading to high-performance flexible electronics based on an inorganic-semiconductor channel. (C) 2015 AIP Publishing LLC.

引用

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