Temperature and frequency dependence of dielectric properties of (Pb, La)(Zr, Sn, Ti)O3 antiferroelectric thin films on LaNiO3 bottom electrode with different sheet resistance

被引：10

作者：

Hao, Xihong ^{[1
,2
]}

Zhai, Jiwei ^{[1
]}

Jia, Qunping ^{[1
]}

Shen, Bo ^{[1
]}

Yao, Xi ^{[1
]}

机构：

[1] Tongji Univ, Funct Mat Res Lab, Shanghai 200092, Peoples R China

[2] Inner Mongolia Univ Sci & Technol, Coll Mat & Met, Baotou 014010, Peoples R China

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2008年 / 41卷 / 16期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1088/0022-3727/41/16/165403

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Via the sol-gel process (Pb0.97La0.02)(Zr0.87Sn0.10Ti0.03)O-3 (PLZST 2/87/10/3) antiferroelectric thin films were deposited on a metalorganic decomposition derived LaNiO3 (LNO) bottom electrode. The phase structure and microstructure of LNO and PLZST 2/87/10/3 thin films were analysed by an x-ray diffractometer (XRD) and a scanning electron microscope (SEM). The effect of the LNO bottom electrode with various sheet resistances on the dielectric proper-ties of PLZST 2/87/10/3 anti ferroelectric thin films was investigated in detail as a function of frequency, temperature and dc electric field. A simple model was presented to explain the nature of LNO bottom electrode based capacitors.

引用

页数：7

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