Optical properties of semiconductors under pressure

被引:86
作者
Goñi, AR
Syassen, K
机构
[1] Tech Univ Berlin, Inst Festkorperphys, D-1000 Berlin, Germany
[2] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany
来源
HIGH PRESSURE IN SEMICONDUCTOR PHYSICS I | 1998年 / 54卷
关键词
D O I
10.1016/S0080-8784(08)60232-X
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
[No abstract available]
引用
收藏
页码:247 / 425
页数:179
相关论文
共 511 条
[1]  
ABRAZEVICIUS G, 1984, SOLID STATE COMMUN, V49, P651
[2]   COUPLED PLASMON-LO PHONON MODES AND LINDHARD-MERMIN DIELECTRIC FUNCTION OF N-GAAS [J].
ABSTREITER, G ;
TROMMER, R ;
CARDONA, M ;
PINCZUK, A .
SOLID STATE COMMUNICATIONS, 1979, 30 (11) :703-707
[3]  
ABSTREITER G, 1984, LIGHT SCATTERING SOL, V4, P5
[4]   MODEL DIELECTRIC-CONSTANTS OF GAP, GAAS, GASB, INP, INAS, AND INSB [J].
ADACHI, S .
PHYSICAL REVIEW B, 1987, 35 (14) :7454-7463
[5]   Hydrostatic pressure dependence of the threshold current in 1.5 mu m strained quantum well lasers [J].
Adams, AR ;
Silver, M ;
OReilly, EP ;
Gonul, B ;
Phillips, AF ;
Sweeney, SJ ;
Thijs, PJA .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1996, 198 (01) :381-388
[6]  
Adams C, 1990, J Perinat Neonatal Nurs, V3, P43
[7]  
Agranovich V. M., 1984, CRYSTAL OPTICS SPATI
[8]   GAMMA-BAND AND X-BAND CONTRIBUTIONS TO NONRESONANT TUNNELING IN GAAS/AL0.35GA0.65AS DOUBLE QUANTUM WELLS [J].
ALEXANDER, MGW ;
NIDO, M ;
REIMANN, K ;
RUHLE, WW ;
KOHLER, K .
APPLIED PHYSICS LETTERS, 1989, 55 (24) :2517-2519
[9]   Calculated optical properties of Si,Ge, and GaAs under hydrostatic pressure [J].
Alouani, M ;
Wills, JM .
PHYSICAL REVIEW B, 1996, 54 (04) :2480-2490
[10]   CALCULATED OPTICAL-PROPERTIES OF SEMICONDUCTORS [J].
ALOUANI, M ;
BREY, L ;
CHRISTENSEN, NE .
PHYSICAL REVIEW B, 1988, 37 (03) :1167-1179