Barrier Potential Engineering in Ti/HfO2/Pt Resistive Random Access Memory

被引：8

作者：

Kumar, S. Sachin ^{[1
]}

Sahu, Paritosh Piyush ^{[1
]}

Panda, Debashis ^{[1
]}

机构：

[1] Natl Inst Sci & Technol, Dept Elect & Commun Engn, Berhampur 761008, Odisha, India

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2017年 / 17卷 / 12期

关键词：

Schottky Height; Resistive Switching Memory; Hafnium Oxide; Image Charge Model; Barrier Lowering; ATOMIC-LAYER-DEPOSITION; ELECTRONIC-STRUCTURE; THIN-FILMS; CAPACITORS; ALUMINUM; OXIDES;

D O I：

10.1166/jnn.2017.14682

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

MOS (metal oxide semiconductor) device is the heart of the electronics. The interface of the different junctions and the barrier height at the interface play a crucial role for the device performance. A petite change in the barrier of metal oxide will influence the current exponentially. In addition to the metal work function and electron affinity of metal oxide system, the dependence of Schottky Barrier Height (SBH) on junction interface makes SBH a complex problem. With respect to the different parameters like dielectric constant and built-in potential of the oxide used causes nonideality in the SBH. In this work, Pt/HfO2/Pt RRAM device is fabricated by sputtering and relationship between applied voltage and Schottky barrier lowering effect are investigated. The characteristics of SBH formed at metal-oxide interface of different metal and oxide combinations are studied. Barrier lowering effect due to the image charge in the Schottky junction using image charge effect model is presented.

引用

页码：9328 / 9332

页数：5

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