Thermal distortion of an X-ray mask for synchrotron radiation lithography

被引：2

作者：

Yang, JF ^{[1
]}

Toyota, E ^{[1
]}

Kawachi, S ^{[1
]}

机构：

[1] Sumitomo Heavy Ind Ltd, Lab Quantum Equipment Technol, Tanashi, Tokyo 1888585, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1998年 / 37卷 / 12B期

关键词：

thermal distortion; X-ray mask; scanning exposure; synchrotron radiation lithography;

D O I：

10.1143/JJAP.37.6804

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A thermal model is developed to calculate the temperature rise in scanning exposure of synchrotron radiation lithography. The maximum temperature rise on a mask membrane is 1 degrees C in the scanning exposure under the given X-ray beam conditions. The behavior of the thermal distortion of the mask has been described in the scanning exposure. The thermal distortion is found to be smaller than 5.7 nm in the x-direction and 12.7 nm (from +8.2 nm to -4.5 nm) in the y-direction from the beginning re, the end of the exposure.

引用

页码：6804 / 6807

页数：4

共 5 条

[1]

HAYTCHER E, 1992, P SOC PHOTO-OPT INS, V1671, P347, DOI 10.1117/12.136019

[2]

HORI T, 1995, P ICSRS AFSR 95 POH

[3] X-ray lithography:: Status, challenges, and outlook for 0.13 μm [J].

Silverman, JP .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1997, 15 (06) :2117-2124

[4]

TOYOTA E, 1998, UNPUB 3 BEAMS C JUN

[5] Novel illumination system of synchrotron radiation stepper with full field exposure method [J].

Watanabe, Y ;

Hara, S ;

Mizusawa, N ;

Fukuda, Y ;

Uzawa, S .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1997, 15 (06) :2503-2508

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