Identification and magneto-optical properties of the NV center in 4H-SiC

被引：80

作者：

von Bardeleben, H. J. ^{[1
]}

Cantin, J. L. ^{[1
]}

Rauls, E. ^{[2
]}

Gerstmann, U. ^{[2
]}

机构：

[1] Univ Paris 06, INSP, CNRS, UMR 7588, F-75005 Paris, France

[2] Univ Paderborn, Lehrstuhl Theoret Phys, D-33098 Paderborn, Germany

来源：

PHYSICAL REVIEW B | 2015年 / 92卷 / 06期

关键词：

SPIN QUBITS; DEFECT; DIVACANCY; DIAMOND;

D O I：

10.1103/PhysRevB.92.064104

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Single spin carrying defects are key elements in quantum information and nanosensing technology with the nitrogen-vacancy (NV) center in diamond being the outstanding example. In a combined electron paramagnetic resonance and first-principles modeling study we verify the existence of such NV centers in 4H-SiC in the form of silicon vacancy-nitrogen pairs (VSiNC) and explore their basic magneto-optical properties. Similar to the NV center in diamond, the (3)A(2) triplet ground state (with a zero-field splitting of D = 429 x 10(-4) cm(-1)) of the singly negative charge state in axial coordination can be optically spin polarized at room temperature. Given the mature technology of 4H-SiC the NV center in this material is expected to play an important role in future spintronics applications.

引用

页数：6

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