Identification and magneto-optical properties of the NV center in 4H-SiC

被引：76

作者：

von Bardeleben, H. J. ^{[1
]}

Cantin, J. L. ^{[1
]}

Rauls, E. ^{[2
]}

Gerstmann, U. ^{[2
]}

机构：

[1] Univ Paris 06, INSP, CNRS, UMR 7588, F-75005 Paris, France

[2] Univ Paderborn, Lehrstuhl Theoret Phys, D-33098 Paderborn, Germany

来源：

PHYSICAL REVIEW B | 2015年 / 92卷 / 06期

关键词：

SPIN QUBITS; DEFECT; DIVACANCY; DIAMOND;

D O I：

10.1103/PhysRevB.92.064104

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Single spin carrying defects are key elements in quantum information and nanosensing technology with the nitrogen-vacancy (NV) center in diamond being the outstanding example. In a combined electron paramagnetic resonance and first-principles modeling study we verify the existence of such NV centers in 4H-SiC in the form of silicon vacancy-nitrogen pairs (VSiNC) and explore their basic magneto-optical properties. Similar to the NV center in diamond, the (3)A(2) triplet ground state (with a zero-field splitting of D = 429 x 10(-4) cm(-1)) of the singly negative charge state in axial coordination can be optically spin polarized at room temperature. Given the mature technology of 4H-SiC the NV center in this material is expected to play an important role in future spintronics applications.

引用

页数：6

共 50 条

[31] Electronic states of vacancies in 3C-and 4H-SiC [J].

Zywietz, A ;

Furthmüller, J ;

Bechstedt, F .

SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 :643-646

[32] 4H-SiC device scaling development on repaired micropipe substrates [J].

Schattner, TE ;

Casady, JB ;

Smith, MCD ;

Mazzola, MS ;

Dimitriev, VA ;

Rentakova, SV ;

Saddow, SE .

SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 :1203-1206

[33] Structure and Origin of Carrot Defects on 4H-SiC Homoepitaxial Layers [J].

Dong, Lin ;

Sun, Guosheng ;

Yu, Jun ;

Yan, Guoguo ;

Zhao, Wanshun ;

Wang, Lei ;

Zhang, Xinhe ;

Li, Xiguang ;

Wang, Zhanguo .

SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014, 778-780 :354-+

[34] Diamond nucleation behavior influenced by pretreatment on 4H-SiC substrates [J].

Choi, Mee-Hi ;

Woo, Ki-Yeol ;

Hong, Soon-Ku ;

Jeong, Seong-Min ;

Lee, Hee-Soo ;

Shin, Yun-Ji .

JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2025, :884-891

[35] Electronic structure and magneto-optical properties of silicon-nitrogen-vacancy complexes in diamond [J].

Zemla, Marcin Roland ;

Czelej, Kamil ;

Kaminska, Paulina ;

Van de Walle, Chris G. ;

Majewski, Jacek A. .

PHYSICAL REVIEW B, 2020, 102 (11)

[36] Defect levels induced by double substitution of B and N in 4H-SiC [J].

Igumbor, E. ;

Danga, H. T. ;

Omotoso, E. ;

Meyer, W. E. .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2019, 442 :41-46

[37] Annealing behavior of Al-implantation-induced disorder in 4H-SiC [J].

Zhang, Y ;

Weber, WJ ;

Jiang, W ;

Shutthanandan, V ;

Thevuthasan, S ;

Janson, M ;

Hallén, A .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2004, 219 :647-651

[38] Formation of Extended Defects in 4H-SiC Induced by Ion Implantation/Annealing [J].

Nagano, M. ;

Tsuchida, H. ;

Suzuki, T. ;

Hatakeyama, T. ;

Senzaki, J. ;

Fukuda, K. .

SILICON CARBIDE AND RELATED MATERIALS 2008, 2009, 615-617 :477-480

[39] On the phase transformation of single-crystal 4H-SiC during nanoindentation [J].

Matsumoto, Mitsuhiro ;

Huang, Hu ;

Harada, Hirofumi ;

Kakimoto, Koichi ;

Yan, Jiwang .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2017, 50 (26)

[40] Effect of growth condition on micropipe filling of 4H-SiC epitaxial layer [J].

Kojima, K. ;

Nishizawa, S. ;

Kuroda, S. ;

Okumura, H. ;

Arai, K. .

JOURNAL OF CRYSTAL GROWTH, 2005, 275 (1-2) :E549-E554

← 1 2 3 4 5 →