Intrinsic factors affecting the microwave dielectric properties of Mg2Ti1-x(Mg1/3Sb2/3)XO4 ceramics

被引:37
作者
Kim, Sung Ho [1 ]
Kim, Eung Soo [1 ]
机构
[1] Kyonggi Univ, Dept Mat Engn, Suwon 443760, South Korea
基金
新加坡国家研究基金会;
关键词
Microwave dielectric properties; Mg2TiO4; Bond valence; Packing fraction; BOND-VALENCE PARAMETERS; PEROVSKITE;
D O I
10.1016/j.ceramint.2016.06.154
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The effect of crystal structure on the microwave dielectric properties of Mg2Ti1-x(Mg1/3Sb2/3)(x)O-4 (0.025 <= x <= 0.15) ceramics was investigated. A single phase having a cubic inverse spinel structure formed over the entire range of compositions, in specimens sintered at 1450 degrees C for 4 h. The structural characteristics of these ceramics were quantitatively evaluated by applying the Rietveld refinement method to the X-ray diffraction data. The largest bond strength between the cation and the oxygen ion and hence the highest quality factor (Qf) of the specimens were obtained at x=0.05. Although the ionic polarizability (3.29 angstrom 3) of (Mg1/3Sb2/3)(4+) was larger than that (2.93 angstrom(3)) of Ti4+, the dielectric constant (K) of the specimens decreased owing to the decrease of rattling effect with increasing x. In addition, the temperature coefficient of resonant frequency (TCF) decreased with decreasing K values. Typically, a high Qf value of 229,000 GHz was obtained for the specimens with x=0.05. (C) 2016 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
引用
收藏
页码:15035 / 15040
页数:6
相关论文
共 30 条
[1]   Ti 2p and O 1s core levels and chemical bonding in titanium-bearing oxides [J].
Atuchin, Victor V. ;
Kesler, Valery G. ;
Pervukhina, Natalia V. ;
Zhang, Zhaoming .
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 2006, 152 (1-2) :18-24
[2]   High-Q microwave dielectric materials based on the spinel Mg2TiO4 [J].
Belous, Anatolii ;
Ovchar, Oleg ;
Durilin, Dmitrii ;
Krzmanc, Marjeta Macek ;
Valant, Matjaz ;
Suvorov, Danilo .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2006, 89 (11) :3441-3445
[3]   BOND-VALENCE PARAMETERS FOR SOLIDS [J].
BRESE, NE ;
OKEEFFE, M .
ACTA CRYSTALLOGRAPHICA SECTION B-STRUCTURAL SCIENCE, 1991, 47 :192-197
[5]  
BURDETT JK, 1993, AM MINERAL, V78, P884
[6]   Wet etching of Ge2SbTe5 films and switching properties of resultant phase change memory cells [J].
Cheng, HY ;
Jong, CA ;
Chung, RJ ;
Chin, TS ;
Huang, RT .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2005, 20 (11) :1111-1115
[7]   Comprehensive derivation of bond-valence parameters for ion pairs involving oxygen [J].
Gagne, Olivier Charles ;
Hawthorne, Frank Christopher .
ACTA CRYSTALLOGRAPHICA SECTION B-STRUCTURAL SCIENCE CRYSTAL ENGINEERING AND MATERIALS, 2015, 71 :562-578
[8]  
Hakki B.W., 1960, IRE T MICROWAVE THEO, V8, P402, DOI DOI 10.1109/TMTT.1960.1124749
[9]   Electronic polarizability, optical basicity and XPS spectra of Sb2O3-B2O3 glasses [J].
Honma, T ;
Sato, R ;
Benino, Y ;
Komatsu, T ;
Dimitrov, V .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 2000, 272 (01) :1-13
[10]   Low-Loss Microwave Dielectrics in the (Mg1-xZnx)2TiO4 Ceramics [J].
Huang, Cheng-Liang ;
Liu, Shih-Sheng .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2008, 91 (10) :3428-3430