Si-based Single-Dopant Atom Devices

被引：1

作者：

Tabe, Michiharu ^{[1
]}

Moraru, Daniel ^{[1
]}

Udhiarto, Arief ^{[1
]}

Miki, Sakito ^{[1
]}

Anwar, Miftahul ^{[1
]}

Kawai, Yuya ^{[1
]}

Mizuno, Takeshi ^{[1
]}

机构：

[1] Shizuoka Univ, Res Inst Elect, Naka Ku, Hamamatsu, Shizuoka 4328561, Japan

来源：

INTER ACADEMIA 2010: GLOBAL RESEARCH AND EDUCATION | 2011年 / 222卷

关键词：

silicon; single-dopant; single-electron devices;

D O I：

10.4028/www.scientific.net/AMR.222.205

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have recently proposed and demonstrated a new device concept, "Si-based single-dopant atom device", consisting of only one or a few dopant atoms in the channel of Si field-effect transistors. The device characteristics are determined by a dopant, which is mediating electron or hole transport between source and drain electrodes. In this paper, our recent results on electronic and photonic applications are introduced. Furthermore, single-dopant images obtained by a scanning probe microscope are also presented.

引用

页码：205 / 208

页数：4

共 50 条

[1] A reliable method for the counting and control of single ions for single-dopant controlled devices
Shinada, T.
Kurosawa, T.
Nakayama, H.
Zhu, Y.
Hori, M.
Ohdomari, I.
NANOTECHNOLOGY, 2008, 19 (34)
[2] Pure Dopant Deposition of B and Ga for Ultrashallow Junctions in Si-based Devices
Nanver, L. K.
Sammak, A.
Mohammadi, V.
Mok, K. R. C.
Qi, L.
Sakic, A.
Golshani, N.
Derakhshandeh, J.
Scholtes, T. M. L.
de Boer, W. B.
MICROELECTRONICS TECHNOLOGY AND DEVICES - SBMICRO 2012, 2012, 49 (01): : 25 - 33
[3] Restoring the lattice of Si-based atom probe reconstructions for enhanced information on dopant positioning
Breen, Andrew J.
Moody, Michael P.
Ceguerra, Anna V.
Gault, Baptiste
Araullo-Peters, Vicente J.
Ringer, Simon P.
ULTRAMICROSCOPY, 2015, 159 : 314 - 323
[4] Single-dopant resonance in a single-electron transistor
Golovach, V. N.
Jehl, X.
Houzet, M.
Pierre, M.
Roche, B.
Sanquer, M.
Glazman, L. I.
PHYSICAL REVIEW B, 2011, 83 (07)
[5] Si-Based Materials and Devices
Chuanbo Li
Jinsong Xia
Linwei Yu
Journal of Semiconductors, 2019, (01) : 106 - 106
[6] Si-Based Materials and Devices
Chuanbo Li
Jinsong Xia
Linwei Yu
Journal of Semiconductors, 2019, 40 (01) : 106
[7] Si-Based Materials and Devices
Journal of Semiconductors, 2019, (08) : 120 - 120
[8] Multidoping of Si Cages: High Spin States beyond the Single-Dopant Septet Limit
Palagin, Dennis
Teufl, Tobias
Reuter, Karsten
JOURNAL OF PHYSICAL CHEMISTRY C, 2013, 117 (31): : 16182 - 16186
[9] Evolution of hyperbranched polyglycerols as single-dopant carriers
Wu, Haigang
Chen, Qunzhi
Huang, Nan
Lian, Xueyan
Li, Ke
COLLOIDS AND SURFACES A-PHYSICOCHEMICAL AND ENGINEERING ASPECTS, 2020, 592
[10] Progress of Si-based Optoelectronic Devices
PENG Ying-cai~(1
2.Key Lab.of Semicond.Mater.Sci.
3.College of Phys.Sci.and Technol.
4.Natural Science Foundation Committee of Hebei Provience
SemiconductorPhotonicsandTechnology, 2004, (03) : 158 - 163

← 1 2 3 4 5 →