Simulation of ion beam induced crystallization and amorphization in (001) silicon

被引：19

作者：

Gärtner, K ^{[1
]}

Weber, B ^{[1
]}

机构：

[1] Univ Jena, Inst Festkorperphys, D-07743 Jena, Germany

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2001年 / 180卷

关键词：

MD simulation; crystallization; amorphization; ion irradiation; a/c-interface;

D O I：

10.1016/S0168-583X(01)00428-1

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The ion beam induced epitaxial crystallization (IBIEC) and the ion beam induced interfacial amorphization (IBIIA) in (0 0 1) silicon caused by 3 MeV Si+ and 3 MeV Au+ irradiation at 293 K and 623 K are investigated by using a combination of binary collision MC simulations and MD simulations. The energy and angular distribution of the primary recoils is calculated by TRIM and the subcascades caused by the primary recoils are treated by classical MD simulations using a correspondingly large MD cell with 49152 atoms. The resulting topological interface structure is analyzed and compared with that obtained by thermally activated solid phase epitaxy. The rates of crystallization and amorphization are calculated and compared with experimental data. Especially, their dependence on the nuclear deposited energy is discussed. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：274 / 279

页数：6