Structural and electrical characterization of AuPtAlTi Ohmic contacts to AlGaN/GaN with varying annealing temperature and Al content

被引：12

作者：

Fay, M. W. ^{[1
]}

Han, Y. ^{[1
]}

Brown, P. D. ^{[1
]}

Harrison, I. ^{[2
]}

Hilton, K. P. ^{[3
]}

Munday, A. ^{[3
]}

Wallis, D. ^{[3
]}

Balmer, R. S. ^{[3
]}

Uren, M. J. ^{[3
]}

Martin, T. ^{[3
]}

机构：

[1] Univ Nottingham, Sch Mech Mat Mfg Engn & Management, Nottingham NG7 2RD, England

[2] Univ Nottingham, Sch Elect & Elect Engn, Nottingham NG7 2RD, England

[3] QinetiQ Ltd, Malvern WR14 3PS, Worcs, England

来源：

JOURNAL OF APPLIED PHYSICS | 2008年 / 103卷 / 07期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1063/1.2890978

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of varying annealing temperature and Al layer thickness on the structural and electrical characteristics of AuPtAlTi/AlGaN/GaN Ohmic contact structures has been systematically investigated. The relationship between annealing temperature, Al content, interfacial microstructure, surface planarity, and contact resistance is examined. In particular, the presence of a detrimental low temperature Pt-Al reaction is identified. This is implicated in both the requirement for a higher Al:Ti ratio than is required for related AuPdAlTi contact schemes and through the degraded temperature dependent resistance behaviour of the annealed AuPtAlTi contacts. (C) 2008 American Institute of Physics.

引用

页数：5

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